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Datasheet IXFR48N60P Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 IXFR48N60P   PolarHV HiPerFET Power MOSFET ISOPLUS247

Advance Technical Information PolarHV HiPerFET Power MOSFET TM IXFR 48N60P ISOPLUS247TM N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode RDS(on) trr VDSS ID25 = 600 V = 32 A ≤ 160 mΩ ≤ 250 ns (Electrically Isolated Back Surface) Symbol VDSS VDGR VGSS V
 IXYS
IXYS		 datasheet IXFR48N60P pdf

IXFR48N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
IXFR48N50Q

HiPerFET Power MOSFETs ISOPLUS247 Q-Class

HiPerFETTM Power MOSFETs ISOPLUS247TM, Q-Class (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt VDSS IXFR 44N50Q IXFR 48N50Q ID25 RDS(on) 500 V 34 A 120 mΩ 500 V 40 A 110 mΩ trr ≤ 250 ns Symbol VDSS VD
 IXYS Corporation
IXYS Corporation		 datasheet pdf - IXYS Corporation
IXFR48N60P

PolarHV HiPerFET Power MOSFET ISOPLUS247

Advance Technical Information PolarHV HiPerFET Power MOSFET TM IXFR 48N60P ISOPLUS247TM N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode RDS(on) trr VDSS ID25 = 600 V = 32 A ≤ 160 mΩ ≤ 250 ns (Electrically Isolated Back Surface) Sym
 IXYS
IXYS		 datasheet pdf - IXYS
IXFR48N50Q

HiPerFET Power MOSFETs ISOPLUS247 Q-Class

HiPerFETTM Power MOSFETs ISOPLUS247TM, Q-Class (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt VDSS IXFR 44N50Q IXFR 48N50Q ID25 RDS(on) 500 V 34 A 120 mΩ 500 V 40 A 110 mΩ trr ≤ 250 ns Symbol VDSS VD
 IXYS Corporation
IXYS Corporation		 datasheet pdf - IXYS Corporation


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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