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Datasheet IXBH40N160 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | IXBH40N160 | High Voltage BIMOSFET Monolithic Bipolar MOS Transistor - N-Channel
High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor
N-Channel, Enhancement Mode
IXBH 40N140 IXBH 40N160
VCES IC25 VCE(sat) tfi
TO-247 AD
= = = =
1400/1600 V 33 A 6.2 V typ. 40 ns
C G
G C E E G = Gate, E = Emitter, C = Collector, TAB = Collector
C (TAB)
Symbol VCES |  IXYS Corporation | mosfet |
IXB Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | IXBD4410 | (IXBD4410 / IXBD4411) ISOSMART Half Bridge Driver Chipset IXBD4410 IXBD4411
ISOSMARTTM Half Bridge Driver Chipset
Type Description Package Temperature Range
IXBD4410PI IXBD4411PI IXBD4410SI IXBD4411SI
Full-Feature Low-Side Driver 16-Pin P-DIP Full-Feature High-Side Driver 16-Pin P-DIP Full-Feature Low-Side Driver 16-Pin SO Full-Feature High-Side Driver IXYS Corporation driver | | |
| 2 | IXBD4411 | (IXBD4410 / IXBD4411) ISOSMART Half Bridge Driver Chipset IXBD4410 IXBD4411
ISOSMARTTM Half Bridge Driver Chipset
Type Description Package Temperature Range
IXBD4410PI IXBD4411PI IXBD4410SI IXBD4411SI
Full-Feature Low-Side Driver 16-Pin P-DIP Full-Feature High-Side Driver 16-Pin P-DIP Full-Feature Low-Side Driver 16-Pin SO Full-Feature High-Side Driver IXYS Corporation driver | | |
| 3 | IXBF12N300 | Monolithic Bipolar MOS Transistor High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
(Electrically Isolated Tab)
IXBF12N300
VCES = IC110 = VCE(sat) ≤
3000V 11A 3.2V
Symbol Test Conditions
VCES VCGR
VGES VGEM
IC25 IC110 ICM
SSOA (RBSOA)
TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transie  IXYS transistor | | |
| 4 | IXBF40N160 | High Voltage BIMOSFET High Voltage BIMOSFETTM
in High Voltage ISOPLUS i4-PACTM
Monolithic Bipolar MOS Transistor
IXBF 40N160
IC25 = 28 A VCES = 1600 V VCE(sat) = 6.2 V tf = 40 ns
1 5
IGBT
Symbol VCES VGES IC25 IC90 ICM VCEK Ptot
Symbol
V CE(sat)
VGE(th) ICES
IGES td(on) t
r
td(off) tf C
ies
QGon VF RthJC
Conditions TV IXYS mosfet | | |
| 5 | IXBF9N140 | High Voltage BIMOSFET Advanced Technical Information
High Voltage BIMOSFETTM
in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor
IXBF 9N140 IC25 IXBF 9N160 VCES
VCE(sat) tf
= = = =
7A 1400/1600 V 4.9V 40 ns
1 5
IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot TC = 25°C TC = 90°C VGE = 15/0 V; RG = 100 IXYS Corporation mosfet | | |
| 6 | IXBF9N140 | High Voltage BIMOSFET Advanced Technical Information
High Voltage BIMOSFETTM
in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor
IXBF 9N140 IC25 IXBF 9N160 VCES
VCE(sat) tf
= = = =
7A 1400/1600 V 4.9V 40 ns
1 5
IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot TC = 25°C TC = 90°C VGE = 15/0 V; RG = 100 IXYS Corporation mosfet | | |
| 7 | IXBF9N160 | High Voltage BIMOSFET Advanced Technical Information
High Voltage BIMOSFETTM
in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor
IXBF 9N140 IC25 IXBF 9N160 VCES
VCE(sat) tf
= = = =
7A 1400/1600 V 4.9V 40 ns
1 5
IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot TC = 25°C TC = 90°C VGE = 15/0 V; RG = 100 IXYS Corporation mosfet | |
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