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Datasheet HUF76432P3 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | HUF76432P3 | 55A/ 60V/ 0.019 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET HUF76609D3, HUF76609D3S
Data Sheet October 1999 File Number 4688.2
10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging
JEDEC TO-251AA
DRAIN (FLANGE)
Features
JEDEC TO-252AA
DRAIN (FLANGE)
SOURCE DRAIN GATE
• Ultra Low On-Resistance - rDS(ON) = 0.160Ω, VGS = 10V - rDS |  Fairchild Semiconductor | mosfet |
| 2 | HUF76432P3 | 55A/ 60V/ 0.019 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET HUF76609D3, HUF76609D3S
Data Sheet October 1999 File Number 4688.2
10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging
JEDEC TO-251AA
DRAIN (FLANGE)
Features
JEDEC TO-252AA
DRAIN (FLANGE)
SOURCE DRAIN GATE
• Ultra Low On-Resistance - rDS(ON) = 0.160Ω, VGS = 10V - rDS |  Intersil Corporation | mosfet |
HUF Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | HUF75229P3 | 44A/ 50V/ 0.022 Ohm/ N-Channel UltraFET Power MOSFET HUF75229P3
Data Sheet December 2001
44A, 50V, 0.022 Ohm, N-Channel UltraFET Power MOSFET
This N-Channel power MOSFET is manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding perfor Fairchild Semiconductor mosfet | | |
| 2 | HUF75229P3 | 44A/ 50V/ 0.022 Ohm/ N-Channel UltraFET Power MOSFET HUF75229P3
Data Sheet June 1998 File Number 4536.1
44A, 50V, 0.022 Ohm, N-Channel UltraFET Power MOSFET
This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in ou Intersil Corporation mosfet | | |
| 3 | HUF75307D3 | 15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs HUF75307P3, HUF75307D3, HUF75307D3S
Data Sheet December 2001
15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, re Fairchild Semiconductor mosfet | | |
| 4 | HUF75307D3 | 15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs HUF75307P3, HUF75307D3, HUF75307D3S
Data Sheet June 1999 File Number
4353.6
15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per Intersil Corporation mosfet | | |
| 5 | HUF75307D3S | 15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs HUF75307P3, HUF75307D3, HUF75307D3S
Data Sheet December 2001
15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, re Fairchild Semiconductor mosfet | | |
| 6 | HUF75307D3S | 15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs HUF75307P3, HUF75307D3, HUF75307D3S
Data Sheet June 1999 File Number
4353.6
15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per Intersil Corporation mosfet | | |
| 7 | HUF75307P3 | 15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs HUF75307P3, HUF75307D3, HUF75307D3S
Data Sheet December 2001
15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, re Fairchild Semiconductor mosfet | | |
| 8 | HUF75307P3 | 15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs HUF75307P3, HUF75307D3, HUF75307D3S
Data Sheet June 1999 File Number
4353.6
15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per Intersil Corporation mosfet | | |
| 9 | HUF75307T3ST | 2.6A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFET HUF75307T3ST
Data Sheet October 1999 File Number 4364.4
2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET
This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting Fairchild Semiconductor mosfet | |
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