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Datasheet H5N2508DS Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | H5N2508DS | Silicon N Channel MOS FET High Speed Power Switching H5N2508DL, H5N2508DS
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1108-0200 (Previous: ADE-208-1377) Rev.2.00 Sep 07, 2005
Features
• Low
• Low on-resistance: R DS (on) = 0.48 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 250 V) • High speed switching |
Renesas Technology |
H5N250 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
H5N2507P | High Speed Power Switching MOS FET |
Renesas Technology |
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H5N2508DL | Silicon N Channel MOS FET High Speed Power Switching |
Renesas Technology |
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H5N2508DS | Silicon N Channel MOS FET High Speed Power Switching |
Renesas Technology |
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Número de pieza | Descripción | Fabricantes | |
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