|
|
Datasheet GT15J331 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | GT15J331 | High Power Switching Applications Motor Control Applications GT15J331
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT15J331
High Power Switching Applications Motor Control Applications
Unit: mm
· · · · ·
The 4th Generation Enhancement-Mode High Speed: tf = 0.10 µs (typ.) Low Saturation Voltage: VCE (sat) = 1.75 V (typ.) FRD includ |
Toshiba Semiconductor |
GT15J Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
GT15J311 | N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) |
Toshiba Semiconductor |
|
GT15J101 | N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) |
Toshiba Semiconductor |
|
GT15J103 | N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) |
Toshiba Semiconductor |
Esta página es del resultado de búsqueda del GT15J331. Si pulsa el resultado de búsqueda de GT15J331 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |