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Datasheet FM250 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | FM250 | Diode (spec sheet) | American Microsemiconductor | diode |
2 | FM250 | Silicon epitaxial planer type Chip Schottky Barrier Diodes
FM220 THRU FM2100
Silicon epitaxial planer type
Formosa MS
SMA
0.185(4.8) 0.177(4.4) 0.012(0.3) Typ.
Features
Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy M olding Compound. For surface mounted applicati | Formosa MS | data |
3 | FM250 | SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (VOLTAGE RANGE 20 to 100 Volts CURRENT 2.0 Amperes) RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FM220 THRU FM2100
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
VOLTAGE RANGE 20 to 100 Volts CURRENT 2.0 Amperes
FEATURES
* * * * * Ideal for surface mounted applications Low leakage current Metallurgically bonded construction Mounting position: Any Weigh | Rectron Semiconductor | rectifier |
4 | FM250-C | Chip Schottky Barrier Diodes Chip Schottky Barrier Diodes
FM220-C THRU FM2100-C
Silicon epitaxial planer type
Formosa MS
SMA
0.185(4.8) 0.177(4.4) 0.012(0.3) Typ.
Features
Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy M olding Compound. For surface mounted appli | Formosa MS | diode |
5 | FM250-M | Silicon epitaxial planer type Chip Schottky Barrier Diodes
FM220-M THRU FM2100-M
Silicon epitaxial planer type
Formosa MS
SOD-123
0.161(4.1) 0.146(3.7) 0.012(0.3) Typ.
Features
Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy M olding Compound. For surface mounted a | Formosa MS | data |
FM2 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | FM20 | Ultra-Low-Power Analog Temperature Sensor www.fairchildsemi.com
FM20
Ultra-Low-Power Analog Temperature Sensor
Features
• • • • • • • Analog Output, -11.77mV/°C Range, -55 to 130°C Accuracy, ±1°C at 25°C Supply Current, 9µA typical Output Drive, 1µA Self-heating < 0.021°C Operating Voltage: +2.4V to +6V
Description
Fairchild Semiconductor sensor | | |
2 | FM200 | Diode (spec sheet) American Microsemiconductor diode | | |
3 | FM200 | High Voltage DC Contactors KILOVAC High Voltage AC Contactors
FM200 (“Flatman III”) Series Contactor 200 Amps, 480 VAC (50/60 Hz), or 48 Vdc, 1-, 2-, or 3-poles
Product Facts
n Multi-pole configurations n Normally open, normally closed and mixed contact arrangements n Optional quick connect tabs for sensing n Small, ligh TE data | | |
4 | FM200ABXYX | High Voltage DC Contactors KILOVAC High Voltage AC Contactors
FM200 (“Flatman III”) Series Contactor 200 Amps, 480 VAC (50/60 Hz), or 48 Vdc, 1-, 2-, or 3-poles
Product Facts
n Multi-pole configurations n Normally open, normally closed and mixed contact arrangements n Optional quick connect tabs for sensing n Small, ligh TE data | | |
5 | FM200CD1D5B | 2-PACK MOSFET MODULE SEMICONDUCTOR
TECHNICAL DATA
150V / 200A 2-PACK MOSFET MODULE (Common-Drain)
FEATURES Low RDS(on) High frequency operation dv/dt ruggedness Fast switching
APPLICATION Battery Management System Electric Vehicle
FM200CD1D5B
INTERNAL CIRCUIT
1 2
6 7
3
5 4
1. D1D2 2. S2 3. S1
4. G1 5. S1 6. G2 7. S KEC mosfet | | |
6 | FM200HB1D5B | 2-PACK MOSFET MODULE SEMICONDUCTOR
TECHNICAL DATA
FM200HB1D5B
150V / 200A 2 - PACK MOSFET MODULE (Half - Bridge)
FEATURES Low RDS(on) High frequency operation dv/dt ruggedness Fast switching
APPLICATION Motor control Battery management system Electric vehicle
INTERNAL CIRCUIT
12
1. D2/S1 2. S2 3. D1
4. G1 5. S1 6. KEC mosfet | | |
7 | FM200TU-07A | HIGH POWER SWITCHING USE INSULATED PACKAGE MITSUBISHI Mitsubishi Electric data | |
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Número de pieza | Descripción | Fabricantes | |
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