DataSheet.es    


Datasheet CPQ130 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1CPQ130Triac 12 Amp

Central TM PROCESS CPQ130 Triac Semiconductor Corp. 12 Amp, 600 Volt Triac Chip PROCESS DETAILS Process Die Size Die Thickness MT1 Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization GLASS PASSIVATED MESA 130 MILS x 130 MILS 8.6 MILS ± 0.6 M
Central Semiconductor
Central Semiconductor		triac


CPQ Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1CPQ057TRIAC 2.0 Amp

PROCESS CPQ057 TRIAC 2.0 Amp, 600 Volt TRIAC Chip PROCESS DETAILS Process Die Size Die Thickness MT1 Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 3,374 PRINCIPAL DEVICE TYPES CQ92-2M CQ223-2M CQ89-2M Gl
Central Semiconductor
Central Semiconductor		triac
2CPQ090TRIAC 4.0 Amp

PROCESS TRIAC CPQ090 4.0 Amp, 600 Volt TRIAC Chip PROCESS DETAILS Process Die Size Die Thickness MT1 Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 1,310 PRINCIPAL DEVICE TYPES 2N6075A CQ202-4MS CQ223-4M
Central Semiconductor
Central Semiconductor		triac
3CPQ110Triac 8.0 Amp

Central TM PROCESS CPQ110 Triac Semiconductor Corp. 8.0 Amp, 600 Volt Triac Chip PROCESS DETAILS Process Die Size Die Thickness MT1 Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization GLASS PASSIVATED MESA 110 MILS x 110 MILS 8.6 MILS ± 0.6
Central Semiconductor
Central Semiconductor		triac
4CPQ130Triac 12 Amp

Central TM PROCESS CPQ130 Triac Semiconductor Corp. 12 Amp, 600 Volt Triac Chip PROCESS DETAILS Process Die Size Die Thickness MT1 Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization GLASS PASSIVATED MESA 130 MILS x 130 MILS 8.6 MILS ± 0.6 M
Central Semiconductor
Central Semiconductor		triac
5CPQ15016A 600V Triac Chip

Central TM PROCESS CPQ150 Triac Semiconductor Corp. 16 Amp, 600 Volt Triac Chip PROCESS DETAILS Process Die Size Die Thickness MT1 Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization GLASS PASSIVATED MESA 150 MILS x 150 MILS 8.6 MILS ± 0.6 M
Central Semiconductor Corporation
Central Semiconductor Corporation		triac
6CPQ165TRIAC 25 Amp

PROCESS CPQ165 TRIAC 25 Amp, 600 Volt TRIAC Chip PROCESS DETAILS Process Die Size Die Thickness MT1 Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 376 PRINCIPAL DEVICE TYPES CQDD-25M Series CQ220-25M Seri
Central Semiconductor
Central Semiconductor		triac
7CPQ16625 Amp 600 Volt TRIAC Chip

PROCESS CPQ166 TRIAC 25 Amp, 600 Volt TRIAC Chip PROCESS DETAILS Process Die Size Die Thickness MT1 Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 373 PRINCIPAL DEVICE TYPES CQDD-25M Series CQ220-25M Series CQ220-25MFP Series
centralsemi
centralsemi		triac



Esta página es del resultado de búsqueda del CPQ130. Si pulsa el resultado de búsqueda de CPQ130 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.


nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


DataSheet.es    |   2020    |  Privacy Policy  |  Contacto  |  Sitemap