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Datasheet CMSSH-3A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | CMSSH-3A | SUPER-MINI SCHOTTKY DIODES W NE
CMSSH-3 CMSSH-3A CMSSH-3C CMSSH-3S
Central
DESCRIPTION
TM
Semiconductor Corp.
SUPER-MINI SCHOTTKY DIODES
SUPER mini
CMSSH-3 CMSSH-3A CMSSH-3C CMSSH-3S
TM
The CENTRAL SEMICONDUCTOR CMSSH-3 Series types are Silicon Schottky diodes, epoxy molded in a super-mini surface mount package, desig |  Central Semiconductor Corp | diode |
| 2 | CMSSH-3AE | ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES CMSSH-3E CMSSH-3AE
CMSSH-3CE CMSSH-3SE
w w w. c e n t r a l s e m i . c o m
ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES
DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSSH-3E Series types are Enhanced Versions of the CMSSH-3 Series of Silicon Schottky Diodes in an SOT-323 Surface Mount |  Central Semiconductor | diode |
CMS Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | CMS-S032-020 | SCHOTTKY BARRIER DIODE
CMS-S032-020
SCHOTTKY BARRIER DIODE
Features :
* Extremely low forward volts * Guard ring protection * Low reverse leakage current
Chip size(A):
0.814 * 0.814 mm
2
Bond Pad size(B)) :
0.686 * 0.686 mm
2
A
Thickness : 300µm ± 20µm
Metalization :
Anode Ti/Ni/Ag
B
Me  Champion Microelectronic diode | | |
| 2 | CMS-S032-040 | SCHOTTKY BARRIER DIODE
CMS-S032-040
SCHOTTKY BARRIER DIODE
Features :
* Extremely low forward volts * Guard ring protection * Low reverse leakage current
Chip size(A):
0.814 * 0.814 mm
2
Bond Pad size(B) :
0.686 * 0.686 mm
2
A
Thickness : 300µm ± 20µm
Metalization :
Anode Ti/Ni/Ag
B
Met Champion Microelectronic diode | | |
| 3 | CMS-S035-020 | SCHOTTKY BARRIER DIODE
CMS-S035-020
SCHOTTKY BARRIER DIODE
Features :
* Extremely low forward volts * Guard ring protection * Low reverse leakage current
Chip size(A):
0.889 * 0.889 mm
2
Bond Pad size(B) :
0.762 * 0.762 mm
2
A
Thickness : 300µm ± 20µm
Metalization :
Anode Ti/Ni/Ag
B
Met Champion Microelectronic diode | | |
| 4 | CMS-S035-040 | SCHOTTKY BARRIER DIODE
CMS-S035-040
SCHOTTKY BARRIER DIODE
Features :
* Extremely low forward volts * Guard ring protection * Low reverse leakage current
Chip size(A):
0.889 * 0.889 mm
2
Bond Pad size(B) :
0.762 * 0.762 mm
2
A
Thickness : 300µm ± 20µm
Metalization :
Anode Ti/Ni/Ag
B
Met Champion Microelectronic diode | | |
| 5 | CMS-S040-020 | SCHOTTKY BARRIER DIODE
CMS-S040-020
SCHOTTKY BARRIER DIODE
Features :
* Extremely low forward volts * Guard ring protection * Low reverse leakage current
Chip size(A):
1.016 * 1.016 mm
2
Bond Pad size(B) :
0.889 * 0.889 mm
2
A
Thickness : 300µm ± 20µm
Metalization :
Anode Ti/Ni/Ag
B
Met Champion Microelectronic diode | | |
| 6 | CMS-S040-040 | SCHOTTKY BARRIER DIODE CMS-S040-040
SCHOTTKY BARRIER DIODE
Features :
* Extremely low forward volts * Guard ring protection * Low reverse leakage current
Chip size(A):
1.016 * 1.016 mm
2
Bond Pad size(B) :
0.889 * 0.889 mm
2
A
Thickness : 300µm ± 20µm
Metalization :
Anode Ti/Ni/Ag
B
Metalization :
Cathode  Champion diode | | |
| 7 | CMS-S040-040L | SCHOTTKY BARRIER DIODE
CMS-S040-040L
SCHOTTKY BARRIER DIODE
Features :
* Extremely low forward volts * Guard ring protection * Low reverse leakage current
Chip size(A):
1.016 * 1.016 mm
2
Bond Pad size(B) :
0.889 * 0.889 mm
2
A
Thickness : 300µm ± 20µm
Metalization :
Anode Ti/Ni/Ag
B
Me Champion Microelectronic diode | |
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