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Datasheet CJP80N03 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | CJP80N03 | N-Channel Power MOSFET, Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L-C Plastic-Encapsulate MOSFETS
CJP80N03
V(BR)DSS
30V
N-Channel Power MOSFET
RDS(on)MAX
6.5mΩ@10V 10mΩ@ 5V
ID
80A
TO-220-3L-C
DESCRIPTION The CJP80N03 uses advanced trench technology and design
to provide excellent RDS(ON) wi | JCET | mosfet |
CJP Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | CJP02N60 | Power Filed Effect Transistor CJP02N60
!
Jiangsu Changjiang Electronics Technology transistor | | |
2 | CJP02N65 | N-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate MOSFETS
CJP02N65
V(BR)DSS
650V
N-Channel Power MOSFET
RDS(on)MAX
4.4Ω@10V
ID
2A
TO-220-3L
GENERAL DESCRIPTION
This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and swi JCET mosfet | | |
3 | CJP02N80 | N-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate MOSFETS
CJP02N80
V(BR)DSS
800V
N-Channel Power MOSFET
RDS(on)MAX
6.3Ω@10V
ID
2.4A
TO-220-3L
GENERAL DESCRIPTION The CJP02N80 is an N-channel mode power MOSFET
using advanced technology to provide costomers w JCET mosfet | | |
4 | CJP03N60 | Power MOSFET, Transistor
CJP03N60
Jiangsu Changjiang Electronics Technology mosfet | | |
5 | CJP04N20 | Power Filed Effect Transistor Jiangsu Changjiang Electronics Technology transistor | | |
6 | CJP04N60 | N-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate MOSFETS
CJP04N60
V(BR)DSS
600V
600V N-Channel Power MOSFET
RDS(on)MAX
3Ω@10V
ID
4A
TO-220-3L
General Description This advanced high voltage MOSFET is designed to wighstand
high energy in the avalanche mode JCET mosfet | | |
7 | CJP04N60A | N-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate MOSFETS
CJP04N60A
V(BR)DSS
600V
N-Channel Power MOSFET
RDS(on)MAX
3Ω@10V
ID
4A
TO-220-3L
GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and swit JCET mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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