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Datasheet BZT55C27 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
9 | BZT55C27 | SILICON EPITAXIAL PLANAR ZENER DIODES BZT55 Series
SILICON EPITAXIAL PLANAR ZENER DIODES
Features • Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise
LS-34
Applications • Voltage stabilization
QuadroMELF Dimensions in mm
Absolute Maximum R |
SEMTECH |
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8 | BZT55C27 | Small Signal Zener Diodes www.vishay.com
BZT55-Series
Vishay Semiconductors
Small Signal Zener Diodes
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
VZ range nom.
2.4 to 75
Test current IZT
2.5 to 5
VZ specification
Pulse current
Int. construction
Single
UNIT V mA
FEATURES • Very sharp reverse characteristic • Lo |
Vishay |
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7 | BZT55C27 | Silicon Epitaxial Planar Z-Diodes BZT55C...
Vishay Telefunken
Silicon Epitaxial Planar Z–Diodes
Features
D D D D D
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
96 12009
Applications
Voltage stabilization
Absolute Maximum Ratings
Tj = 25_C Parameter |
Vishay Telefunken |
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6 | BZT55C27 | Silicon Epitaxial Planar Z-Diodes TELEFUNKEN Semiconductors
BZT55C...
Silicon Epitaxial Planar Z–Diodes
Features
D Very sharp reverse characteristic D Low reverse current level D Very high stability D Low noise D Available with tighter tolerances
Applications
Voltage stabilization
94 9373
Absolute Maximum Ratings
Tj = 25_C P |
TEMIC Semiconductors |
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Número de pieza | Descripción | Fabricantes | |
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