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Datasheet BUK9618-55 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | BUK9618-55 | TrenchMOS transistor Logic level FET Philips Semiconductors
Product specification
TrenchMOS™ transistor Logic level FET
GENERAL DESCRIPTION
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state res |
 NXP Semiconductors |
 |
| 2 | BUK9618-55 | TrenchMOS transistor Logic level FET Philips Semiconductors
Product specification
TrenchMOS™ transistor Logic level FET
GENERAL DESCRIPTION
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state res |
NXP Semiconductors |
|
| 1 | BUK9618-55A | N-channel TrenchMOS logic level FET D2 PA K
BUK9618-55A
N-channel TrenchMOS logic level FET
Rev. 02 — 16 February 2011 Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed an |
NXP Semiconductors |
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