Datasheet BUK9610-55A Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	BUK9610-55A	N-channel TrenchMOS logic level FET D2 PA K BUK9610-55A N-channel TrenchMOS logic level FET Rev. 02 — 16 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed an	NXP Semiconductors

BUK9610- Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
BUK9610-100B	TrenchMOS logic level FET BUK95/9610-100B TrenchMOS™ logic level FET Rev. 02 — 8 October 2002 Product data 1. Product proﬁle 1.1 Description N-channel enhancement mode ﬁeld-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology. Product avai	NXP Semiconductors
BUK9610-30	TrenchMOS transistor Logic level FET Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device features v	NXP Semiconductors
BUK9610-55A	N-channel TrenchMOS logic level FET D2 PA K BUK9610-55A N-channel TrenchMOS logic level FET Rev. 02 — 16 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product	NXP Semiconductors

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Número de pieza	Descripción	Fabricantes	PDF
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