Datasheet BSC265N10LSFG Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	BSC265N10LSFG	Power-Transistor BSC265N10LSF G OptiMOS™2 Power-Transistor Features • N-channel, logic level • Very low gate charge x R DS(on) product (FOM) Product Summary V DS R DS(on),max ID PG-TDSON-8 100 26.5 40 V mΩ A • Ideal for high-frequency switching and synchronous rectification • Low on-resistance R DS(on	Infineon Technologies

BSC265N10L Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
BSC265N10LSFG	Power-Transistor BSC265N10LSF G OptiMOS™2 Power-Transistor Features • N-channel, logic level • Very low gate charge x R DS(on) product (FOM) Product Summary V DS R DS(on),max ID PG-TDSON-8 100 26.5 40 V mΩ A • Ideal for high-frequency switching and synchronous rectification • Low o	Infineon Technologies

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Número de pieza	Descripción	Fabricantes	PDF
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