Datasheet BCR400R Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	BCR400R	Active Bias Controller (Supplies stable bias current even at low battery voltage and extreme ambient temperature variation) BCR 400R Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FETs from from less than 0.2mA up to more than 2	Siemens Semiconductor Group	controller
2	BCR400R	Application Considerations for the Integrated Bias Control Circuits Silicon Discrete Components Application Considerations for the Integrated Bias Control Circuits BCR400R and BCR400W Application Note No. 014 Figure 1 RF Transistor Controlled by BCR400 Operating Point • BCR400 stabilizes the operating current (i.e. IC or ID), the collector (or drain) voltage	Infineon Technologies AG	data

BCR Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	BCR08AM	LOW POWER USE PLANAR PASSIVATION TYPE To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1	RENESAS	data
2	BCR08AM-12	Triac Low Power Use BCR08AM-12 Triac Low Power Use REJ03G0343-0100 Rev.1.00 Aug.20.2004 Features • IT (RMS) : 0.8 A • VDRM : 600 V • IRGTI, IRGTⅢ : 5 mA • Planar Passivation Type Outline TO-92 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 3 2 Applications Electric fan, air cle	Renesas Technology	triac
3	BCR08AM-14	LOW POWER USE PLANAR PASSIVATION TYPE MITSUBISHI SEMICONDUCTOR 〈TRIAC 〉 BCR08AM-14 LOW POWER USE PLANAR PASSIVATION TYPE BCR08AM-14 OUTLINE DRAWING φ 5.0 MAX. Dimensions in mm 4.4 VOLTAGE CLASS TYPE NAME T1 TERMINAL T2 TERMINAL GATE TERMINAL CIRCUMSCRIBE CIRCLE φ 0.7 1.25 1.25 1.3 12.5 MIN. 5.0 MAX.	Mitsubishi Electric Semiconductor	data
4	BCR08AM-14A	Triac Low Power Use BCR08AM-14A Triac Low Power Use REJ03G1200-0200 Rev.2.00 Nov 30, 2007 Features • IT (RMS) : 0.8 A • VDRM : 700 V • IFGT I, IRGT I, IRGT III : 5 mA • Planar Passivation Type Outline RENESAS Package code: PRSS0003EA-A (Package name: TO-92) 2 1. T1 Terminal 2. T2 Terminal	Renesas Technology	triac
5	BCR08AS	TRIAC BCR08AS MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR08AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE OUTLINE DRAWING Dimensions in mm 4.4±0.1 1.6±0.2 1.5±0.1 0.8 MIN 2.5±0.1 3.9±0.3 123 • IT (RMS) ..................................................................... 0.8A •	Mitsubishi	triac
6	BCR08AS	TRIAC MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR08AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR08AS OUTLINE DRAWING Dimensions in mm 4.4±0.1 1.6±0.2 1.5±0.1 2.5±0.1 1 0.8 MIN 2 3 0.5±0.07 0.4±0.07 1.5±0.1 1.5±0.1 (Back side) 2 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL	Powerex Power Semiconductors	triac
7	BCR08AS-12	TRIAC BCR08AS-12 Triac Low Power Use REJ03G0292-0200 Rev.2.00 Mar 22, 2007 Features • • • • IT (RMS) : 0.8 A VDRM : 600 V IFGTI, IRGTI, IRGT : 5 mA IFGT : 10 mA • Non-Insulated Type • Planar Passivation Type • Completed Pb Free Outline RENESAS Package code: PLZZ0004CA-	Renesas Technology	triac

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Número de pieza	Descripción	Fabricantes	PDF
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