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Datasheet APT5020 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 9 | APT5020 | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT5020SVR
500V 26A 0.200Ω
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through |
 Advanced Power Technology |
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| 8 | APT5020 | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT5020SVR
500V 26A 0.200Ω
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through |
Advanced Power Technology |
|
| 7 | APT5020BLC | Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs. 500V 26A 0.200W
APT5020BLC APT5020SLC
BLC D3PAK
TO-247
POWER MOS VITM
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge cou |
Advanced Power Technology |
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| 6 | APT5020BN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS D
TO-247
G S
APT5020BN 500V
®
28.0A 0.20Ω 27.0A 0.22Ω
POWER MOS IV
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage
APT5022BN 500V
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
All Ratings: TC = 25°C unless otherwise specified.
APT 5020BN APT |
Advanced Power Technology |
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