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Datasheet 2SK359 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
12 | 2SK359 | Silicon N-Channel MOS FET 2SK359
Silicon N-Channel MOS FET
Application
VHF amplifier
Outline
TO-92 (2)
1. Gate 2. Source 3. Drain 3 2 1
2SK359
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature Storage temperat |
Hitachi Semiconductor |
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11 | 2SK3592-01L | N-CHANNEL SILICON POWER MOSFET
2SK3592-01L,S,SJ
FUJI POWER MOSFET
200304
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
Applications
Switching regulators UPS (Uninterruptible Pow |
Fuji Electric |
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10 | 2SK3592-01S | N-CHANNEL SILICON POWER MOSFET
2SK3592-01L,S,SJ
FUJI POWER MOSFET
200304
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
Applications
Switching regulators UPS (Uninterruptible Pow |
Fuji Electric |
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9 | 2SK3592-01SJ | N-CHANNEL SILICON POWER MOSFET
2SK3592-01L,S,SJ
FUJI POWER MOSFET
200304
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
Applications
Switching regulators UPS (Uninterruptible Pow |
Fuji Electric |
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Número de pieza | Descripción | Fabricantes | |
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