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Datasheet 2SK358 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 11 | 2SK358 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK358
DESCRIPTION ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 250V(Min) ·Fast Switching Speed
APPLICATIONS ·High speed. ·high voltage Switching applications
DC–DC converter and motor dri |
 Inchange Semiconductor |
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| 10 | 2SK3580-01MR | N-CHANNEL SILICON POWER MOSFET 2SK3580-01MR
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
TO-220F
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
M |
 Fuji Electric |
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| 9 | 2SK3581-01L | N-CHANNEL SILICON POWER MOSFET
2SK3581-01L,S,SJ
200304
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
P4
Applications
Switching regulators UPS (Uninterruptibl |
Fuji Electric |
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| 8 | 2SK3581-01S | N-CHANNEL SILICON POWER MOSFET
2SK3581-01L,S,SJ
200304
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
P4
Applications
Switching regulators UPS (Uninterruptibl |
Fuji Electric |
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