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Datasheet 2SK3135 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | 2SK3135 | Silicon N Channel MOS FET High Speed Power Switching 2SK3135(L),2SK3135(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-695B (Z) 3rd. Edition February 1999 Features
• Low on-resistance R DS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source
Outline
LDPAK
4 4
2 1 1 2 3
1
2
3
1. Gate |
Hitachi Semiconductor |
|
2 | 2SK3135L | Silicon N Channel MOS FET High Speed Power Switching 2SK3135(L),2SK3135(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-695B (Z) 3rd. Edition February 1999 Features
• Low on-resistance R DS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source
Outline
LDPAK
4 4
2 1 1 2 3
1
2
3
1. Gate |
Hitachi Semiconductor |
|
1 | 2SK3135S | Silicon N Channel MOS FET High Speed Power Switching 2SK3135(L),2SK3135(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-695B (Z) 3rd. Edition February 1999 Features
• Low on-resistance R DS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source
Outline
LDPAK
4 4
2 1 1 2 3
1
2
3
1. Gate |
Hitachi Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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