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Datasheet 2SK311 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 16 | 2SK311 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK311
DESCRIPTION ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 450V(Min) ·Fast Switching Speed
APPLICATIONS ·High speed power Switching .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
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 Inchange Semiconductor |
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| 15 | 2SK311 | (2SK310 / 2SK311) SILICON N-CHANNEL MOS FET |
 Hitachi Semiconductor |
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| 14 | 2SK3110 | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3110
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK3110 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, |
 NEC |
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| 13 | 2SK3111 | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3111
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK3111 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, |
NEC |
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