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Datasheet 2SK2939 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2SK2939 | Silicon N Channel MOS FET High Speed Power Switching 2SK2939(L),2SK2939(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-562D (Z) 5th. Edition Jun 1998 Features
• Low on-resistance R DS =0.020 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source
Outline
LDPAK
4 4
D
G 1 2
1
2
3
3
S
1. Gate |
 Hitachi Semiconductor |
 |
| 2 | 2SK2939L | Silicon N Channel MOS FET High Speed Power Switching 2SK2939(L),2SK2939(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-562D (Z) 5th. Edition Jun 1998 Features
• Low on-resistance R DS =0.020 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source
Outline
LDPAK
4 4
D
G 1 2
1
2
3
3
S
1. Gate |
Hitachi Semiconductor |
|
| 1 | 2SK2939S | Silicon N Channel MOS FET High Speed Power Switching 2SK2939(L),2SK2939(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-562D (Z) 5th. Edition Jun 1998 Features
• Low on-resistance R DS =0.020 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source
Outline
LDPAK
4 4
D
G 1 2
1
2
3
3
S
1. Gate |
Hitachi Semiconductor |
|
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