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Datasheet 2SK2869 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | 2SK2869 | Silicon N Channel MOS FET High Speed Power Switching 2SK2869
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-570 1st. Edition Features
• Low on-resistance R DS = 0.033 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source
Outline
DPAK–2
4
4
D 1 2 G 3
S
1 2
3
1. Gate 2. Drain 3. Source 4. Drai |
 Hitachi Semiconductor |
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| 4 | 2SK2869 | Silicon N Channel MOS FET High Speed Power Switching
2SK2869(L), 2SK2869(S)
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1037-0200 (Previous: ADE-208-570) Rev.2.00 Sep 07, 2005
Features
• Low on-resistance RDS = 0.033 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source
Outlin |
 Renesas Technology |
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| 3 | 2SK2869 | N-Channel Silicon MOSFET SMD Type
N-Channel Silicon MOSFET 2SK2869
IC MOSFET
Features
Low on-resistance RDS = 0.033 typ.
+0.15 6.50-0.15 +0.2 5.30-0.2
TO-252
+0.15 1.50-0.15
+0.1 2.30-0.1 +0.8 0.50-0.7
Unit: mm
High speed switching
+0.2 9.70-0.2
4V gate drive device can be driven from 5V source
+0.1 0.80-0.1
+0.15 0 |
 Kexin |
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| 2 | 2SK2869L | Silicon N Channel MOS FET High Speed Power Switching
2SK2869(L), 2SK2869(S)
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1037-0200 (Previous: ADE-208-570) Rev.2.00 Sep 07, 2005
Features
• Low on-resistance RDS = 0.033 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source
Outlin |
Renesas Technology |
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