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Datasheet 2SK2857 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2SK2857 | MOS Field Effect Transistor SMD Type
MOS Field Effect Transistor 2SK2857
Features
Can be driven by a 5V power source. Low On-state resistance : RDS(on)1 = 220 m MAX. (VGS = 4 V, ID = 1.5 A) RDS(on)2 = 150 m MAX. (VGS = 10 V, ID = 2.5 A)
SOT-89
4.50+0.1 -0.1
1.80+0.1 -0.1
12 3
0.48+0.1 -0.1
0.53+0.1 -0.1
+0.12.50 -0.1
+0 |
 Kexin |
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| 2 | 2SK2857 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2857
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
DESCRIPTION The 2SK2857 is a switching device which can be driven directly
by a 5V power source. The 2SK2857 features a low on-state resistance and excellent
Switching Characteristics, and |
 NEC |
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| 1 | 2SK2857C | N-CHANNEL MOSFET Preliminary Data Sheet
2SK2857C
N-CHANNEL MOSFET FOR SWITCHING
R07DS1261EJ0200 Rev.2.00
Jun 11, 2015
Description
The 2SK2857C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.0 V power source.
Features Directly driven by a 4 |
 Renesas |
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