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Datasheet 2SD257 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 9 | 2SD257 | (2SD256 - 2SD259) NPN Transistor |
 ETC |
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| 8 | 2SD2571 | Silicon NPN Triple Diffused Type TRANSISTOR 2SD2571
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor)
2SD2571
High Power Switching Applications Hammer Drive, Pulse Motor Drive Applications
Unit: mm
· High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) · Low saturation voltage: VCE (sat) = 1.5 V (m |
 Toshiba Semiconductor |
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| 7 | 2SD2573 | Silicon NPN triple diffusion planar type Power Transistors
2SD2573
Silicon NPN triple diffusion planar type
For high current amplification, power amplification
7.5±0.2
Unit: mm
4.5±0.2
16.0±1.0
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base |
 Panasonic Semiconductor |
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| 6 | 2SD2575 | Silicon NPN epitaxial planer type(For low-frequency power amplification) Transistor
2SD2575
Silicon NPN epitaxial planer type
For low-frequency power amplification
Unit: mm
5.0±0.2 4.0±0.2
q
Low collector to emitter saturation voltage VCE(sat).
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak c |
Panasonic Semiconductor |
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