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Datasheet 2SD2161 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 2SD2161 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
Product Specification
2SD2161
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min) ·High DC Current Gain-
: hFE= 2000(Min)@ (VCE= 2V, IC= 2A) ·Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ (IC= 2A, |
 Inchange Semiconductor |
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| 1 | 2SD2161 | NPN Silicon Transistor DATA SHEET
SILICON POWER TRANSISTOR
2SD2161
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SD2161 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal fo |
 NEC |
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