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Datasheet 2N6517 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 2N6517 | NPN SILICON PLANAR EPITAXIAL TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N6515, 2N6519 2N6516, 2N6520 2N6517
TO-92 Plastic Package
HIGH VOLTAGE TRANSISTORS
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMB | CDIL | transistor |
2 | 2N6517 | High Voltage Transistors MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N6515/D
High Voltage Transistors
COLLECTOR 3
COLLECTOR 3
2 BASE
NPN
1 EMITTER
2 BASE
PNP
1 EMITTER
NPN 2N6515 2N6517
PNP 2N6519 2N6520
MAXIMUM RATINGS
Rating
2N6517 Symbol 2N6515 2N6519 2N6520
Collector – Emitter Voltage
Co | Motorola Semiconductors | transistor |
3 | 2N6517 | COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS 2N6515 2N6516 2N6517 NPN 2N6518 2N6519 2N6520 PNP
COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6515, 2N6518 series devices are complementary silicon transistors designed for high voltage driver and amplifier application | Central Semiconductor | transistor |
4 | 2N6517 | High Voltage Transistors ON Semiconductort
High Voltage Transistors
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage 2N6515, 2N6516, 2N6517 2N6519, 2N6520
VCEO VCBO VEBO
Base Current
Collector Current – Continuous
IB IC
Total Device Dissipation
@ TA = 25°C | ON Semiconductor | transistor |
5 | 2N6517 | NPN Transistor Transys
Electronics
LIMITED
TO-92 Plastic-Encapsulated Transistors
2N6517 TRANSISTOR (NPN)
FEATURES Power dissipation
PCM : 625 mW (Tamb=25℃) Collector current
ICM : 500 mA Collector-base voltage
V(BR)CBO : 350 V Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
TO-92
| TRANSYS | transistor |
2N6 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 2N60 | N-CHANNEL MOSFET
UNISONIC TECHNOLOGIES CO., LTD 2N60
2 Amps, 600 Volts N-CHANNEL MOSFET
DESCRIPTION
The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche charact Unisonic Technologies mosfet | | |
2 | 2N60-E | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
2N60-E
2A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. Unisonic Technologies mosfet | | |
3 | 2N6008 | Series 2N Transistors Sprague transistor | | |
4 | 2N6009 | Series 2N Transistors Sprague transistor | | |
5 | 2N6010 | Silicon Transistors Semiconductor transistor | | |
6 | 2N6027 | SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS 2N6027 2N6028
SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS
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DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6027 and 2N6028 devices are silicon programmable unijunction transistors, manufactured in an epoxy molded package, designed for adjustable (programmable) characte Central Semiconductor transistor | | |
7 | 2N6027 | Programmable Unijunction Transistor 2N6027, 2N6028
Preferred Device
Programmable Unijunction Transistor
Programmable Unijunction Transistor Triggers
Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, h, IV, and IP by merely selecting two resistor values. Application includes thyristor−trigge ON Semiconductor transistor | |
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Número de pieza | Descripción | Fabricantes | |
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