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Datasheet 1N5831 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1N5831 | Silicon Power Schottky Diode Silicon Power Schottky Diode
Features • High Surge Capability • Types up to 40V VRRM • Not ESD Sensitive
Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base.
1N5829 thru 1N5831R
VRRM = 20 V - 40 V IF = 25 A
DO-4 Package
Maximum ratings, at Tj |  GeneSiC | diode |
| 2 | 1N5831 | SCHOTTKY DIODES Transys
Electronics
LIMITED
1N5829(R) THRU
1N6096(R)
SCHOTTKY DIODES STUD TYPE
Features
High Surge Capability
Types up to 40V VRRM
25 A
25Amp Rectifier 20-40 Volts
DO-4
Maximum Ratings
Operating Temperature: -55 C to +150 Storage Temperature: -55 C to +175
B N MC
Part Number
1N5829( R ) 1N583 |  TRANSYS | diode |
| 3 | 1N5831 | 25A SCHOTTKY BARRIER RECTIFIERS 1N5829-1N5831
High-reliability discrete products and engineering services since 1977
25A SCHOTTKY BARRIER RECTIFIERS
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), s |  Digitron Semiconductors | rectifier |
| 4 | 1N5831 | 25 Amp Schottky Rectifier |  Microsemi Corporation | rectifier |
| 5 | 1N5831 | 25 Amp Schottky Barrier Rectifier 20 to 35 Volts MCC
Features
• • • •
omponents 21201 Itasca Street Chatsworth !"# $
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1N5829 thru 1N5831
25 Amp Schottky Barrier Rectifier 20 to 35 Volts
DO-4
B
Metal of siliconrectifier, majonty carrier conducton Guard ring for transient |  Micro Commercial Components | rectifier |
1N5 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1N50 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | 1N50 | GOLD BONDED GERMANIUM DIODES New Jersey Semiconductor diode | | |
| 3 | 1N50 | N-CHANNEL POWER MOSFET 1N50
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
Power MOSFET
1.3A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state re  Unisonic Technologies mosfet | | |
| 4 | 1N50-KW | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
1N50-KW
Preliminary
1A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara Unisonic Technologies mosfet | | |
| 5 | 1N500 | Diode, Rectifier American Microsemiconductor diode | | |
| 6 | 1N5000 | Silicon Rectifiers Microsemi Corporation rectifier | | |
| 7 | 1N5000 | Diode Switching 400V 3A 2-Pin TOP HAT New Jersey Semiconductor diode | |
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