전자부품 회로 및 기능
13007
NPN Epitaxial Silicon Transistor
13007 NPN Epitaxial Silicon Transistor
HIGH VOLTAGE SWITCH MODE APPLICATION
Collector-Emitter Voltage: VCEO=400V Collector Dissipation: PC(max)=80W
Absolute Maximum Ratings (TA=25oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collect
Elite
13007A
MJE13007A
Mospec Semiconductor
13007B
TS13007B
TS13007B
High Voltage NPN Transistor
TO-220
Pin Definition: 1. Base 2. Collector 3. Emitter
PRODUCT SUMMARY
BVCEO BVCBO IC VCE(SAT) 400V 700V 8A 3V @ IC , IB = 8A , 2A
Features
● ● High Voltage High Speed Switching
Block Diagram
Structure
● ● Silicon Triple Diffused Type NPN Silicon Tr
TSC
13007N
ST13007N
STMicroelectronics
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관련 부품 상세설명
130NS
Standard Recovery Diodes
Naina Semiconductor Ltd.
130NS(R)
Standard Recovery Diodes, 130A
Features
Diffused Series Industrial grade Available in Normal and Reverse polarity Metric and UNF thread type
Electrical Specifications (TE = 25oC, unless otherwise noted)
Symbol
Parameters
Values Units
IF(AV) Maximum avg. f
Naina Semiconductor
130NSR
Standard Recovery Diodes
Naina Semiconductor
1302
Diode ( Rectifier )
American Microsemiconductor
1304
Diode ( Rectifier )
American Microsemiconductor
1306
Diode ( Rectifier )
American Microsemiconductor
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PartNumber.co.kr | 2020 |
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