반도체 부품 기능 및 데이터시트
60N03GP
AP60N03GP
AP60N03GS, P
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Low On-Resistance ▼ Fast Switching
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
30V 13.5mΩ 55A
▼ Simple Drive Requirement
G S
Description
The Advanced Power MOSFETs from APEC provide the designer wit
Advanced Power Electronics
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[
홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 부품 상세설명
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isc N-Channel MOSFET Transistor
isc Product Specification
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·DESCRIPTION ·Drain Current ID= 40A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Fast Switching Speed
·APPLICATIONS ·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
ARA
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Preliminary
60 Amps, 80 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 60N08 is an N-channel power MOSFET adopting UTC’s advanced planar stripe and DMOS technology to provide designers with perfectly high switching speed and minimum on-state resistance.
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60N06
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