반도체 부품 기능 및 데이터시트
2SB1169
Power Transistors
Power Transistors
2SB1169, 2SB1169A
Silicon PNP epitaxial planar type
For power amplification
Unit : mm
■ Features
High forward current transfer ratio hFE which has satisfactory linearity Low collector-emitter saturation voltage VCE(sat) I type package enabling direct soldering of the radiati
Panasonic
2SB1169A
Power Transistors
Panasonic
2SB1169A
Transistors
SMD Type
Silicon PNP Epitaxial Planar Type 2SB1169A
TO-252
+0.15 1.50 -0.15
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
High forward current transfer ratio hFE which has satisfactory linearity. Low collector-emitter saturation voltage VCE(sat).
+0.2 9.70 -0.2
6.50 +0.2 5.30-0.2
+
Kexin
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[
홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 부품 상세설명
2SB710
PNP Transistors
Kexin
2SB624
PNP Epitaxial Planar Transistors
PNP Epitaxial Planar Transistors
P b Lead(Pb)-Free
ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC PD Tj Tstg
2SB6
WEITRON
2SB624
PNP Transistor
TRANSYS
2SB624
SILICON PNP TRANSISTOR
2SB624(3CG624)
硅 PNP 半 三 管, SILICON PNP TRANSISTOR
用途:用于音 放大。
Purpose: Audio frequency amplifier application .
特点:高 hFE, 2SD596(3DG596M)互 。
Features: High hFE, complementary pair with 2SD596(3DG596M).
限 , Absolute Maximum Ratings(Ta=25℃)
符
位
LZG
2SB624-HF
PNP Transistors
Kexin
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