1N6388 반도체 회로 부품 판매점
Zener Transient Voltage Suppressors
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 ON Semiconductor |
1N6382 − 1N6389 Series
(ICTE−10C − ICTE−36C,
MPTE−8C − MPTE−45C)
1500 Watt Peak Power
Mosorb™ Zener Transient
Voltage Suppressors
Bidirectional*
Mosorb devices are designed to protect voltage sensitive
components from high voltage, high−energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. These devices are
ON Semiconductor’s exclusive, cost-effective, highly reliable
Surmetic™ axial leaded package and are ideally-suited for use in
communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/consumer applications, to protect CMOS, MOS and
Bipolar integrated circuits.
Specification Features:
• Working Peak Reverse Voltage Range − 8 V to 45 V
• Peak Power − 1500 Watts @ 1 ms
• ESD Rating of Class 3 (>16 KV) per Human Body Model
• Maximum Clamp Voltage @ Peak Pulse Current
• Low Leakage < 5 mA Above 10 V
• Response Time is Typically < 1 ns
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230°C, 1/16″ from the case for 10 seconds
POLARITY: Cathode band does not imply polarity
MOUNTING POSITION: Any
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1)
@ TL ≤ 25°C
PPK
1500
Watts
Steady State Power Dissipation
@ TL ≤ 75°C, Lead Length = 3/8″
Derated above TL = 75°C
Thermal Resistance, Junction−to−Lead
Operating and Storage
Temperature Range
PD
RqJL
TJ, Tstg
5.0
20
20
− 65 to
+175
Watts
mW/°C
°C/W
°C
1. Nonrepetitive current pulse per Figure 4 and derated above TA = 25°C
per Figure 2.
*Please see 1N6373 – 1N6381 (ICTE−5 − ICTE−36, MPTE−5 − MPTE−45)
for Unidirectional Devices
http://onsemi.com
AXIAL LEAD
CASE 41A
PLASTIC
L
MPTE
−xxC
1N
63xx
YYWW
L
ICTE
−xxC
YYWW
L = Assembly Location
MPTE−xxC = ON Device Code
ICTE−xxC = ON Device Code
1N63xx = JEDEC Device Code
YY = Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
MPTE−xxC
MPTE−xxCRL4
Axial Lead
Axial Lead
500 Units/Box
1500/Tape & Reel
ICTE−xxC*
ICTE−xxCRL4
Axial Lead
Axial Lead
500 Units/Box
1500/Tape & Reel
1N63xx
Axial Lead 500 Units/Box
1N63xxRL4
Axial Lead 1500/Tape & Reel
*ICTE−10C Not Available in 500 Units/Box
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 3
1
Publication Order Number:
1N6382/D
1N6382 − 1N6389 Series (ICTE−10C − ICTE−36C, MPTE−8C − MPTE−45C)
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP
VC
VRWM
IR
VBR
IT
QVBR
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Maximum Temperature Variation of VBR
I
IPP
VC VBR VRWM IIRT
IIRT
V
VRWM VBR VC
IPP
Bi−Directional TVS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
JEDEC
Device
(ON Device)
Device
Marking
VRWM
(Note 2)
(Volts)
IR @
VRWM
(mA)
Breakdown Voltage
VBR (Note 3) (Volts)
Min Nom Max
@ IT
(mA)
VC @ IPP (Note 4)
VC IPP
(Volts)
(A)
VC (Volts) (Note 4)
@ IPP
=1A
@ IPP
= 10 A
QVBR
(mV/°C)
1N6382
1N6382
(MPTE−8C) MPTE−8C
8.0
25 9.4
−
− 1.0
15
100 11.3 11.5 8.0
1N6383
1N6383
(MPTE−10C) MPTE−10C
10
2.0 11.7
−
− 1.0 16.7
90 13.7 14.1 12
1N6384
1N6384
(MPTE−12C) MPTE−12C
12
2.0 14.1
−
− 1.0 21.2
70 16.1 16.5 14
1N6385
1N6385
(MPTE−15C) MPTE−15C
15
2.0 17.6
−
− 1.0
25
60 20.1 20.6 18
1N6386
1N6386
(MPTE−18C) MPTE−18C
18
2.0 21.2
−
− 1.0
30
50 24.2 25.2 21
1N6387
1N6387
(MPTE−22C) MPTE−22C
22
2.0 25.9
−
− 1.0 37.5
40 29.8
32
26
1N6388
1N6388
(MPTE−36C) MPTE−36C
36
2.0 42.4
−
− 1.0 65.2
23 50.6 54.3 50
1N6389
1N6389
(MPTE−45C) MPTE−45C
45
2.0 52.9
−
− 1.0 78.9
19 63.3
70
60
ICTE−10C* ICTE−10C*
ICTE−12C ICTE−12C
10
12
2.0 11.7
2.0 14.1
−
−
− 1.0 16.7
− 1.0 21.2
90 13.7 14.1 8.0
70 16.1 16.5 12
ICTE−15C
ICTE−18C
ICTE−22C
ICTE−36C
ICTE−15C
ICTE−18C
ICTE−22C
ICTE−36C
15
18
22
36
2.0 17.6
2.0 21.2
2.0 25.9
2.0 42.4
−
−
−
−
− 1.0
25
− 1.0
30
− 1.0 37.5
− 1.0 65.2
60 20.1 20.6 14
50 24.2 25.2 18
40 29.8 32 21
23 50.6 54.3 26
NOTES:
2. A transient suppressor is normally selected according to the maximum working peak reverse voltage (VRWM), which should be equal to
or greater than the dc or continuous peak operating voltage level.
3. VBR measured at pulse test current IT at an ambient temperature of 25°C and minimum voltage in VBR is to be controlled.
4. Surge current waveform per Figure 4 and derate per Figures 1 and 2.
*Not Available in the 500 Units/Box.
http://onsemi.com
2
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