P6SMB16A 반도체 회로 부품 판매점
Surface Mount Transient Voltage Suppressor
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 Taiwan Semiconductor Company |
www.DataSheet4U.com
P6SMB SERIES
Surface Mount Transient Voltage Suppressor
Voltage Range
6.8 to 200 Volts
600 Watts Peak Power
Features
SMB/DO-214AA
For surface mounted application in order to optimize board
space
Low profile package
Built-in strain relief
Glass passivated junction
Excellent clamping capability
Fast response time: Typically less than 1.0ps from 0 volt to
BV min.
Typical IR less than 1μA above 10V
High temperature soldering guaranteed:
250OC / 10 seconds at terminals
Plastic material used carries Underwriters Laboratory
Flammability Classification 94V-0
600 watts peak pulse power capability with a 10 x 1000 us
waveform by 0.01% duty cycle
Mechanical Data
Case: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
Standard packaging: 12mm tape (EIA STD RS-481)
Weight: 0.093gram
.082(2.08)
.076(1.93)
.147(3.73)
.137(3.48)
.103(2.61)
.078(1.99)
.056(1.41)
.035(0.90)
.187(4.75)
.167(4.25)
.012(.31)
.006(.15)
.008(.20)
.004(.10)
.208(5.28)
.200(5.08)
.012(.31)
.006(.15)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Type Number
Peak Power Dissipation at TA=25OC,
Tp=1ms(Note 1)
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load
(JEDEC method) (Note 2, 3) - Unidirectional Only
Maximum Instantaneous Forward Voltage at
50.0A for Unidirectional Only (Note 4)
Operating and Storage Temperature Range
Symbol
PPK
IFSM
VF
TJ, TSTG
Value
Minimum 600
100
3.5
-65 to + 150
Units
Watts
Amps
Volts
OC
Notes: 1. Non-repetitive Current Pulse Per Fig. 3 and Derated above TA=25OC Per Fig. 2.
2. Mounted on 5.0mm2 (.013 mm Thick) Copper Pads to Each Terminal.
3. 8.3ms Single Half Sine-wave or Equivalent Square Wave, Duty Cycle=4 pulses Per Minute
Maximum.
Devices for Bipolar Applications
1. For Bidrectional Use C or CA Suffix for Types P6SMB6.8 through Types P6SMB200A.
2. Electrical Characteristics Apply in Both Directions.
- 620 -
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RATINGS AND CHARACTERISTIC CURVES (P6SMB SERIES)
FIG.1- PEAK PULSE POWER RATING CURVE
100
NON-REPETITIVE
PULSE WAVEFORM
SHOWN in FIG.3
10 TJ = 25OC
1
FIG.2- PULSE DERATING CURVE
100
75
50
25
0.1
0.1 s
1.0 s
10 s
100 s
tp, PULSE WIDTH, sec.
1.0ms
10ms
FIG.3- PULSE WAVEFORM
150
tr = 10 sec
PULSE WIDTH (td) is DEFINED
as the POINT WHERE the PEAK
CURRENT DECAYS
Peak Value to 50% of IPPM
100 IPPM
Half Value - IPPM
2
10/1000 sec. WAVEFORM
50 as DEFINED by R.E.A.
0
0 25 50 75 100 125 150 175 200
TA, AMBIENT TEMPERATURE. (OC)
FIG.4- MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT UNIDIRECTIONAL ONLY
200
8.3ms Single Half Sine Wave
100 JEDEC Method
50
td
0
0 1.0
2.0
t, TIME, ms
3.0
4.0
FIG.5- TYPICAL REVERSE LEAKAGE CHARACTERASTICS
1000
100
10
MEASURED AT DEVICES
STAND-OFF
1 VOLTAGE, VWM
0.1
10
1
2 4 6 8 10 20 40 60 80 100
NUMBER OF CYCLES AT 60Hz
FIG.6- TYPICAL JUNCTION CAPACITANCE
UNIDIRECTIONAL
6000
MEASURED at
ZERO BIAS
1000
Tj =25OC
f = 1.0MHz
Vsig = 50 mVp-p
MEASURED at
100
STAND-OFF
VOLTAGE, VWM
0.01
0.001
0
TJ = 25OC
10
100 200 300 400 500
1
10 100 200
V(BR), BREAKDOWN VOLTAGE. VOLTS
V(BR), BREAKDOWN VOLTAGE. VOLTS
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제조업체: Taiwan Semiconductor Company
( taiwan )
P6SMB16A tvs-diode
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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