SMBJ11D 판매점 - TVS Diode ( Rectifier )

SMBJ11D 반도체 회로 부품 판매점

TVS Diode ( Rectifier )

Vishay

SMBJ5.0D thru SMBJ188D, SMBJ5.0CD thru SMBJ18CD

www.vishay.com

Vishay General Semiconductor

Surface Mount TRANSZORB®

Transient Voltage Suppressors

DO-214AA (SMBJ)

PRIMARY CHARACTERISTICS

VBR (uni-directional)

VBR (bi-directional)

VWM (uni-directional)

VWM (bi-directional)

PPPM

PD at TM = 50 °C

PD at TA = 25 °C

TJ max.

Polarity

6.5 V to 228 V

6.5 V to 21.8 V

5.0 V to 188 V

5.0 V to 18 V

600 W

5.0 W

1.0 W

150 °C

Uni-directional, bi-directional

Package

DO-214AA (SMBJ)

DEVICES FOR BI-DIRECTIONAL

APPLICATIONS

For bi-directional devices use CD suffix (e.g. SMBJ5.0CD).

Electrical characteristics apply in both directions.

FEATURES

• Low profile package

• Ideal for automated placement

• ± 3.5 %: very tight VBR tolerance

• Low leakage current

• Available in uni-directional and bi-directional

• 600 W peak pulse power capability with a 10/1000 μs

waveform, repetitive rate (duty cycle): 0.01 %

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting

on ICs, MOSFETs, signal lines of sensor units for consumer,

computer, industrial, and telecommunication.

MECHANICAL DATA

Case: DO-214AA (SMBJ)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS-compliant, and

industrial grade

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 2 whisker test

Polarity: for uni-directional types the band denotes cathode

end, no cathode band on bi-directional types

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER

Peak pulse power dissipation

with a 10/1000 μs waveform

Peak pulse current

with a 10/1000 μs waveform

Power dissipation

TM = 50 °C

TA = 25 °C

Operating junction and storage temperature range

Notes

(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2

(2) Power dissipation mounted on infinite heatsink

(3) Power dissipation mounted on minimum recommended pad layout

SYMBOL

PPPM (1)

IPPM (1)

PD (2)

PD (3)

TJ, TSTG

VALUE

600

See next table

5.0

1.0

-55 to +150

UNIT

°C

Revision: 26-Aug-15

1 Document Number: 87606

For technical questions within your region: [email protected], [email protected], [email protected]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SMBJ5.0D thru SMBJ188D, SMBJ5.0CD thru SMBJ18CD

www.vishay.com

Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

DEVICE TYPE

DEVICE

MARKING

CODE

UNI BI

BREAKDOWN

VOLTAGE

VBR AT IT (1)

(V)

MIN. MAX.

TEST

CURRENT

(mA)

STAND-OFF

VOLTAGE

VWM (V)

MAXIMUM

REVERSE

LEAKAGE

AT VWM

ID (μA) (2)

(+)SMBJ5.0D

6AA 6AA 6.50 6.97

5.0 500

(+)SMBJ6.0D

6AB 6AB 6.77 7.27

6.0 500

(+)SMBJ6.5D

6AC 6AC 7.33 7.87

6.5 300

(+)SMBJ7.0D

6AD 6AD 7.90 8.48

7.0 150

(+)SMBJ7.5D

6AE 6AE 8.46 9.08

1.0

7.5

(+)SMBJ8.0D

6AF 6AF 9.03 9.69

1.0

8.0

(+)SMBJ8.5D

6AG 6AG 9.57 10.3

1.0

8.5

(+)SMBJ9.0D

6AH 6AH 10.2 10.9

1.0

9.0

5.0

(+)SMBJ10D

6AK 6AK 11.3 12.1

1.0

2.0

(+)SMBJ11D

6AL 6AL 12.4 13.3

1.0

2.0

(+)SMBJ12D

6AM 6AM 13.5 14.5

1.0

2.0

(+)SMBJ13D

6AN 6AN 14.6 15.7

1.0

0.5

(+)SMBJ14D

6AP 6AP 15.8 17.0

1.0

0.5

(+)SMBJ15D

6AQ 6AQ 17.0 18.2

1.0

0.5

(+)SMBJ16D

6AR 6AR 18.1 19.4

1.0

0.5

(+)SMBJ17D

6AS 6AS 19.2 20.6

1.0

0.5

(+)SMBJ18D

6AT 6AT 20.3 21.8

1.0

0.5

(+)SMBJ20D

6AU -

22.5 24.2

1.0

0.5

(+)SMBJ22D

6AV -

24.8 26.6

1.0

0.5

(+)SMBJ24D

6AW -

27.1 29.1

1.0

0.5

(+)SMBJ26D

6AX -

29.3 31.5

1.0

0.5

(+)SMBJ28D

6AY -

31.6 33.9

1.0

0.5

(+)SMBJ30D

6AZ -

33.8 36.3

1.0

0.5

(+)SMBJ33D

6BA -

37.3 40.0

1.0

0.5

(+)SMBJ36D

6BB -

40.6 43.6

1.0

0.5

(+)SMBJ40D

6BC -

45.1 48.4

1.0

0.5

(+)SMBJ43D

6BD -

48.5 52.1

1.0

0.5

(+)SMBJ45D

6BE -

50.8 54.5

1.0

0.5

(+)SMBJ48D

6BF -

54.1 58.1

1.0

0.5

(+)SMBJ51D

6BG -

57.6 61.8

1.0

0.5

(+)SMBJ54D

6BH -

60.9 65.4

1.0

0.5

(+)SMBJ58D

6BK -

65.4 70.2

1.0

0.5

(+)SMBJ60D

6BL -

67.7 72.7

1.0

0.5

(+)SMBJ64D

6BM -

72.2 77.5

1.0

0.5

(+)SMBJ70D

6BN -

79.0 84.8

1.0

0.5

(+)SMBJ75D

6BP -

84.6 90.8

1.0

0.5

(+)SMBJ78D

6BQ -

88.1 94.4

1.0

0.5

(+)SMBJ85D

6BR -

95.7 103

1.0

0.5

(+)SMBJ90D

6BS -

102 109

1.0

0.5

(+)SMBJ100D

6BT -

113 121

1.0

100

0.5

(+)SMBJ110D

6BU -

124 133

1.0

110

0.5

(+)SMBJ120D

6BV -

135 145

1.0

120

0.5

(+)SMBJ130D

6BW -

146 157

1.0

130

0.5

(+)SMBJ150D

6BX -

170 182

1.0

150

0.5

(+)SMBJ160D

6BY -

181 194

1.0

160

0.5

(+)SMBJ170D

6BZ -

192 206

1.0

170

0.5

SMBJ188D

6CA -

212 228

1.0

188

0.5

MAXIMUM

PEAK PULSE

SURGE

CURRENT

IPPM (A) (3)

65.9

58.9

54.5

50.8

47.2

44.8

42.2

39.7

35.9

33.5

30.6

28.3

26.2

25.0

23.4

22.1

20.8

18.8

17.1

15.6

14.5

13.4

12.6

11.5

10.5

9.43

8.76

8.40

7.90

7.40

7.00

6.50

6.28

5.88

5.40

5.06

4.86

4.46

4.17

3.77

3.45

3.15

2.94

2.53

2.34

2.23

2.03

MAXIMUM

CLAMPING

VOLTAGE

AT IPPM

VC (V)

9.1

10.2

11.0

11.8

12.7

13.4

14.3

15.1

16.7

17.9

19.6

21.2

22.9

24.0

25.6

27.2

28.8

32.0

35.1

38.4

41.6

44.7

47.7

52.5

57.3

63.6

68.5

71.6

76.3

81.2

85.9

92.3

95.5

102

111

119

124

135

144

159

174

190

206

239

256

270

301

Notes

• All terms and symbols are consistent with ANSI/IEEE C62.35

(1) Pulse test: tp  50 ms

(2) For bi-directional types having VWM of 12 V and less, the ID limit is doubled

(3) Surge current waveform per fig. 3 and derate per fig. 2

(+) Underwriters Laboratory Recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number

E136766 for both uni-directional and bi-directional device

Revision: 26-Aug-15

2 Document Number: 87606

For technical questions within your region: [email protected], [email protected], [email protected]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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( vishay )

SMBJ11D tvs-diode

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SMBJ11D 반도체 회로 부품 판매점

TVS Diode ( Rectifier )

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