1N6383 반도체 회로 부품 판매점
TVS Diode ( Rectifier )
|
|
 Vishay |
www.vishay.com
ICTE5 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
TRANSZORB® Transient Voltage Suppressors
Case Style 1.5KE
PRIMARY CHARACTERISTICS
VWM
5.0 V to 18 V
VBR (uni-directional)
6.0 V to 21.2 V
VBR (bi-directional)
9.2 V to 21.2 V
PPPM
1500 W
PD 6.5 W
IFSM
200 A
TJ max.
175 °C
Polarity
Uni-directional, bi-directional
Package
1.5KE
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional types, use C suffix (e.g. ICTE18C).
Electrical characteristics apply in both directions.
FEATURES
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 1500 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate (duty
cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
MECHANICAL DATA
Case: Molded epoxy body over passivated junction
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant and commercial grade
Base P/NHE3 - RoHS compliant and AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: For uni-directional types the color band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig. 1)
Peak pulse current with a 10/1000 μs waveform (1) (fig. 3)
Power dissipation on infinite heatsink at TL = 75 °C (fig. 8)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
Maximum instantaneous forward voltage at 100 A for uni-directional only
Operating junction and storage temperature range
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
(2) 8.3 ms single half sine-wave, duty cycle = 4 pulses per minute maximum
SYMBOL
PPPM
IPPM
PD
IFSM
VF
TJ, TSTG
LIMIT
1500
See next table
6.5
200
3.5
- 55 to + 175
UNIT
W
A
W
A
V
°C
Revision: 18-Sep-12
1 Document Number: 88356
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
ICTE5 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (JEDEC REGISTERED DATA) (TA = 25 °C unless otherwise noted)
JEDEC
TYPE
NUMBER
GENERAL
SEMICONDUCTOR
PART NUMBER
STAND-OFF
VOLTAGE
VWM (V)
MINIMUM
BREAKDOWN
VOLTAGE
AT 1.0 mA
VBR (V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (μA)
MAXIMUM
CLAMPING
VOLTAGE
AT IPP = 1.0 A
VC (V)
MAXIMUM
CLAMPING
VOLTAGE AT
IPP = 10 A
VC (V)
MAXIMUM
PEAK
PULSE
CURRENT
IPP (A)
UNI-DIRECTIONAL TYPES
1N6373 (2)
ICTE5 (2)
5.0
6.0 300 7.1 7.5 160
1N6374
ICTE8
8.0
9.4
25.0 11.3 11.5
100
1N6375
ICTE10
10.0 11.7 2.0 13.7 14.1 90
1N6376
1N6377
1N6378
ICTE12
ICTE15
ICTE18
12.0 14.1 2.0 16.1 16.5 70
15.0 17.6 2.0 20.1 20.6 60
18.0 21.2 2.0 24.2 25.2 50
BI-DIRECTIONAL TYPES
1N6382
1N6383
ICTE8C
8.0 9.4
50
11.4
11.6
100
ICTE10C
10.0 11.7
2.0
14.1
14.5
90
1N6384
1N6385
1N6386
ICTE12C
12.0 14.1
2.0
16.7
17.1
70
ICTE15C
15.0 17.6
2.0
20.8
21.4
60
ICTE18C
18.0 21.2
2.0
24.8
25.5
50
Notes
(1) “C” suffix indicates bi-directional
(2) ICTE5 and 1N6373 are not available as bi-directional
(3) Clamping factor: 1.33 at full rated power; 1.20 at 50 % rated power; clamping factor: the ratio of the actual VC (clamping voltage) to the VBR
(breakdown voltage) as measured on a specific device
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE
ICTE5-E3/54
0.968
54
ICTE5HE3/54 (1)
0.968
54
Note
(1) AEC-Q101 qualified
BASE QUANTITY
1400
1400
DELIVERY MODE
13" diameter paper tape and reel
13" diameter paper tape and reel
Revision: 18-Sep-12
2 Document Number: 88356
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
|
PDF 파일 내의 페이지 : 총 5 페이지
제조업체: Vishay
( vishay )
1N6383 tvs-diode
데이터시트 다운로드 :
[ 1N6383.PDF ]
[ 1N6383 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
1N6380
1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors - ON Semiconductor
1N6380
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR STANDOFF VOLTAGE- 5.0 to 45.0V 1500 Watt Peak Power - ETC
1N6380
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR - MDE
1N6380
1500W Transient Voltage Suppressor - TAITRON
1N6380
(1N6373A Series) Zener Transient Voltage Suppressors - Motorola Semiconductors
1N6380
Transient Voltage Suppressor - Digitron Semiconductors
1N6380
1500 WATT LOW CLAMPING FACTOR TRANSIENT VOLTAGE SUPPRESSOR - Microsemi
1N6380
Diode TVS Uni-Dir 36V 1.5KW 2-Pin Case 41A-04 - New Jersey Semiconductor
1N6381
1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors - ON Semiconductor