SMAJ120 반도체 회로 부품 판매점
TVS Diode (Transient Voltage Suppressor)
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 GALAXY ELECTRICAL |
BL GALAXY ELECTRICAL
TRANSIENT VOLTAGE SUPPRESSOR
FEATURES
Plastic package has underwriters laboratory
flammability classification 94V-0
Optimized for LAN protection applications
Low profile package with built-in strain relief for
surface mounted applications
Glass passivated junction
Low incremental surge resistance, excellent clamping
capability
400W peak pulse power capability with a 10/1000µs wave-
form, repetition rate (duty cycle): 0.01% (300W above 78V)
Very fast response time
High temperature soldering guaranteed: 250°C/10
seconds at terminals
MECHANICAL DATA
Case:JEDEC DO-214AC molded plastic over passivated
chip
Terminals: solder plated, solderable per MIL-STD-750,
method 2026
Polarity: foruni-directional types the color band denotes
the cathode, which is postitive with respect to the
anode under normal TVS operation
Mounting position: any Weight: 0.002 ounces, 0.064 grams
SMAJ5.0---SMAJ188CA
BREAKDOWN VOLTAGE: 5.0 --- 188 V
PEAK PULSE POWER: 400 W
DO-214AC(SMA)
Devices for Bidirectional Applications
For bi-directional devices, use suffix C or CA (e.g. SMAJ10C, SMAJ10CA). Electrical characteristics apply in both directions.
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Peak pow er dissipation w ith a 10/1000μs w aveform (NOTE 1,2, FIG.1)
Peak pulse current w ith a 10/1000μs w aveform (NOTE 1)
Typical thermal resistance, junction to ambient (NOTE 3)
SYMBOL
VALUE
PPPM
Minimum 400
IPPM See next table
RθJA
120.0
UNIT
W
A
/W
Peak forw ard surge current, 8.3ms single half sine-w ave
ffff uni-directional only (NOTE 2)
IFSM 40.0 A
Typical thermal resistance, junction to ambient (NOTE 3)
RθJL 30 /W
Operating junction and storage temperature range
TJ, TSTG
-55---+150
NOTES: (1) Non-repetitive current pules, per Fig. 3 and derated above TA=25 per Fig. 2. Rating is 300W above 78V.
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pads to each terminal.
(3) Mounted on minimum recommended pad layout.
www.galaxycn.com
Document Number 0285005
BLGALAXY ELECTRICAL
1.
ELECTRICAL CHARACTERISTICS
R atings at 25 am bient tem perature unles s otherwis e spec if ied.VF=3.5V at IF=25A (uni-directional only )
Device ty pe
De v ic e
marking
code
Uni Bi
Breakdow n
v oltage V (BR) at IT(1)
(V)
Min Max
Te s t
current
IT(m A )
Stand-of f
v oltage
VWM (V)
Max imum
reverse leakage
at V WM
ID( A )(3)
Max imum
peak pulss surge
current I PPM
(A )(2)
Max imum
clamping
v oltage at I PPM
Vc (V)
SMA J5.0
AD WD 6.40 7.81
10
5.0
SMA J5.0A (5) A E
WE 6.40
7.08
10
5.0
SMA J6.0
AF WF 6.67 8.15
10
6.0
SMA J6.0A
AG
WG 6.67
7.37
10
6.0
SMA J6.5
AH WH 7.22 8.82
10
6.5
SMA J6.5A
AK
WK 7.22 7.98
10
6.5
SMA J7.0 A L WL 7.78 9.51
10
7.0
SMA J7.0A
AM
WM 7.78
8.60
10
7.0
SMA J7.5
A N WN 8.33 10.3
1.0
7.5
SMA J7.5A
AP
WP 8.33
9.21
1.0
7.5
SMA J8.0
AQ
WQ 8.89
10.9
1.0
8.0
SMA J8.0A
AR
WR 8.89 9.83
1.0
8.0
SMA J8.5
A S WS 9.44 11.5
1.0
8.5
SMA J8.5A
AT
WT 9.44 10.4
1.0
8.5
SMA J9.0
A U WU 10.0 12.2
1.0
9.0
SMA J9.0A
AV
WV
10.0
11.1
1.0
9.0
SMA J10
A W WW 11.1 13.6
1.0
10
SMA J10A
AX
WX
11.1
12.3
1.0
10
SMA J11
AY
WY
12.2
14.9
1.0
11
SMA J11A
AZ
WZ
12.2
13.5
1.0
11
SMA J12
BD
XD
13.3
16.3
1.0
12
SMA J12A
BE
XE
13.3
14.7
1.0
12
SMA J13
BF
XF
14.4
17.6
1.0
13
SMA J13A
BG
XG
14.4
15.9
1.0
13
SMA J14
BH
XH
15.6
19.1
1.0
14
SMA J14A
BK
XK
15.6
17.2
1.0
14
SMA J15
BL
XL
16.7
20.4
1.0
15
SMA J15A
BM
XM
16.7
18.5
1.0
15
SMA J16
BN
XN
17.8
21.8
1.0
16
SMA J16A
BP
XP
17.8
19.7
1.0
16
SMA J17
BQ
XQ
18.9
23.1
1.0
17
SMA J17A
BR
XR
18.9
20.9
1.0
17
SMA J18
BS
XS
20.0
24.4
1.0
18
SMA J18A
BT
XT
20.0
22.1
1.0
18
SMA J20
BU
XU
22.2
27.1
1.0
20
SMA J20A
BV
XV
22.2
24.5
1.0
20
SMA J22
BW
XW
24.4
29.8
1.0
22
SMA J22A
BX
XX
24.4
26.9
1.0
22
SMA J24
BY
XY
26.7
32.6
1.0
24
SMA J24A
BZ
XZ
26.7
29.5
1.0
24
SMA J26
CD
YD
28.9
35.3
1.0
26
SMA J26A
CE
YE
28.9
31.9
1.0
26
SMA J28
CF
YF
31.1
38.0
1.0
28
SMA J28A
CG
Y G 31.1 34.4
1.0
28
SMA J30
CH Y H 33.3 40.7 1.0
30
SMA J30A
CK
Y K 33.3 36.8
1.0
30
Notes : (1) Pulse test :tP 50ms
(2) Surge c urrent w avef orm per Fig.3 and derate per Fig.2
(3) For bi-direc tional types hav ing V WM of 10 V olts and less ,the ID Iimit is doubled
(4) A ll terms and sy mbols are c onsistent w ith A NSI/IEEE C62.35
(5) For the bidirectional SMA J5.0CA ,the maximum V (BR) is 7.25V
800
800
800
800
500
500
200
200
100
100
50
50
10
10
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
41.7
43.5
35.1
38.8
32.5
35.7
30.1
33.3
28.0
31.0
26.7
29.4
25.2
27.8
23.7
26.0
21.3
23.5
19.9
22.0
18.2
20.1
16.8
18.6
15.5
17.2
14.9
16.4
13.9
15.4
13.1
14.5
12.4
13.7
11.2
12.3
10.2
11.3
9.3
10.3
8.6
9.5
8.0
8.8
7.5
8.3
9.6
9.2
11.4
10.3
12.3
11.2
13.3
12.0
14.3
12.9
15.0
13.6
15.9
14.4
16.9
15.4
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
35.8
32.4
39.4
35.5
43.0
38.9
46.6
42.1
50.0
45.4
53.5
48.4
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Document Number 0285005
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2.
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SMAJ120 tvs-diode
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