SMBJ64 판매점 - TVS Diode ( Rectifier )

SMBJ64 반도체 회로 부품 판매점

TVS Diode ( Rectifier )

Vishay

SMBJ5.0 thru SMBJ188CA

Vishay General Semiconductor

Surface Mount TRANSZORB® Transient Voltage Suppressors

DO-214AA (SMB J-Bend)

PRIMARY CHARACTERISTICS

VWM

PPPM

IFSM (uni-directional only)

TJ max.

5.0 V to 188 V

600 W

100 A

150 °C

DEVICES FOR BI-DIRECTION APPLICATIONS

For bi-directional devices use C or CA suffix

(e.g. SMBJ10CA).

Electrical characteristics apply in both directions.

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Available in uni-directional and bi-directional

• 600 W peak pulse power capability with a

10/1000 µs waveform, repetitive rate (duty

cycle): 0.01 %

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 260 °C

• Solder dip 260 °C, 40 s

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and

lighting on ICs, MOSFET, signal lines of sensor units

for consumer, computer, industrial, automotive and

telecommunication.

MECHANICAL DATA

Case: DO-214AA (SMBJ)

Molding compound meets UL 94 V-0 flammability

rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, high reliability/

automotive grade (AEC Q101 qualified)

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3

suffix meets JESD 201 class 2 whisker test

Polarity: For uni-directional types the band denotes

cathode end, no marking on bi-directional types

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER

Peak pulse power dissipation with a 10/1000 µs waveform (1)(2) (Fig. 1)

Peak pulse current with a 10/1000 µs waveform (1)

Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)

Operating junction and storage temperature range

Notes:

(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2

(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal

SYMBOL

PPPM

IPPM

IFSM

TJ, TSTG

VALUE

600

See next table

100

- 55 to + 150

UNIT

°C

Document Number: 88392 For technical questions within your region, please contact one of the following:

Revision: 04-Sep-07

[email protected], [email protected], [email protected]

www.vishay.com

SMBJ5.0 thru SMBJ188CA

Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

DEVICE TYPE

MODIFIED

“J” BEND LEAD

DEVICE MARKING

CODE

UNI BI

BREAKDOWN

VOLTAGE

VBR AT IT (1)

(V)

MIN. MAX.

TEST

CURRENT

(mA)

STAND-OFF

VOLTAGE

VWM

(V)

MAXIMUM

REVERSE

LEAKAGE

AT VWM

ID (µA) (3)

(+)SMBJ5.0

(+)SMBJ5.0A (5)

KD 6.40 7.82

KE 6.40 7.07

5.0

800

(+)SMBJ6.0

(+)SMBJ6.0A

(+)SMBJ6.5

(+)SMBJ6.5A

(+)SMBJ7.0

(+)SMBJ7.0A

(+)SMBJ7.5

KF KF 6.67 8.15

KG KG 6.67 7.37

KH AH 7.22 8.82

KK AK 7.22 7.98

KL KL 7.78 9.51

KM KM 7.78 8.60

KN AN 8.33 10.2

1.0

6.0

6.5

7.0

7.5

800

500

200

100

(+)SMBJ7.5A

(+)SMBJ8.0

(+)SMBJ8.0A

KP AP 8.33 9.21 1.0

KQ AQ 8.89 10.9 1.0

KR AR 8.89 9.83 1.0

7.5

8.0

100

(+)SMBJ8.5

(+)SMBJ8.5A

(+)SMBJ9.0

KS AS 9.44 11.5 1.0

KT AT 9.44 10.4 1.0

KU AU 10.0 12.2 1.0

8.5

9.0

(+)SMBJ9.0A

(+)SMBJ10

(+)SMBJ10A

(+)SMBJ11

KV AV 10.0 11.1

KW AW 11.1 13.6

KX AX 11.1 12.3

KY KY 12.2 14.9

1.0

9.0

5.0

(+)SMBJ11A

(+)SMBJ12

(+)SMBJ12A

(+)SMBJ13

(+)SMBJ13A

(+)SMBJ14

KZ KZ 12.2 13.5 1.0

LD BD 13.3 16.3 1.0

LE BE 13.3 14.7 1.0

LF LF 14.4 17.6 1.0

LG LG 14.4 15.9 1.0

LH BH 15.6 19.1 1.0

5.0

1.0

(+)SMBJ14A

(+)SMBJ15

(+)SMBJ15A

(+)SMBJ16

LK BK 15.6 17.2 1.0

LL BL 16.7 20.4 1.0

LM BM 16.7 18.5 1.0

LN LN 17.8 21.8 1.0

1.0

(+)SMBJ16A

(+)SMBJ17

(+)SMBJ17A

(+)SMBJ18

(+)SMBJ18A

(+)SMBJ20

LP LM 17.8 19.7 1.0

LQ LQ 18.9 23.1 1.0

LR LR 18.9 20.9 1.0

LS BS 20.0 24.4 1.0

LT BT 20.0 22.1 1.0

LU LU 22.2 27.1 1.0

1.0

(+)SMBJ20A

(+)SMBJ22

(+)SMBJ22A

(+)SMBJ24

(+)SMBJ24A

(+)SMBJ26

(+)SMBJ26A

(+)SMBJ28

(+)SMBJ28A

(+)SMBJ30

LV LV 22.2 24.5

LW BW 24.4 29.8

LX BX 24.4 26.9

LY BY 26.7 32.6

LZ BZ 26.7 29.5

MD CD 28.9 35.3

ME CE 28.9 31.9

MF MF 31.1 38.0

MG MG 31.1 34.4

MH CH 33.3 40.7

1.0

(+)SMBJ30A

(+)SMBJ33

(+)SMBJ33A

(+)SMBJ36

(+)SMBJ36A

(+)SMBJ40

(+)SMBJ40A

MK CK 33.3 36.8

ML CL 36.7 44.9

MM CM 36.7 40.6

MN CN 40.0 48.9

MP CP 40.0 44.2

MQ CQ 44.4 54.3

MR CR 44.4 49.1

1.0

MAXIMUM

PEAK PULSE

SURGE

CURRENT

IPPM (A) (2)

62.5

65.2

52.6

58.3

48.8

53.6

45.1

50.0

42.0

46.5

40.0

44.1

37.7

41.7

35.5

39.0

31.9

35.3

29.9

33.0

27.3

30.2

25.2

27.9

23.3

25.9

22.3

24.6

20.8

23.1

19.7

21.7

18.6

20.5

16.8

18.5

15.2

16.9

14.0

15.4

12.9

14.3

12.0

13.2

11.2

12.4

10.2

11.3

9.3

10.3

8.4

9.3

MAXIMUM

CLAMPING

VOLTAGE AT

IPPM

VC (V)

9.6

9.2

11.4

10.3

12.3

11.2

13.3

12.0

14.3

12.9

15.0

13.6

15.9

14.4

16.9

15.4

18.8

17.0

20.1

18.2

22.0

19.9

23.8

21.5

25.8

23.2

26.9

24.4

28.8

26.0

30.5

27.6

32.2

29.2

35.8

32.4

39.4

35.5

43.0

38.9

46.6

42.1

50.0

45.4

53.5

48.4

59.0

53.3

64.3

58.1

71.4

64.5

www.vishay.com

For technical questions within your region, please contact one of the following: Document Number: 88392

[email protected], [email protected], [email protected]

Revision: 04-Sep-07

PDF 파일 내의 페이지 : 총 6 페이지

제조업체: Vishay

( vishay )

SMBJ64 tvs-diode

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SMBJ64 반도체 회로 부품 판매점

TVS Diode ( Rectifier )

국내 전력반도체 판매점

일반적인 전자부품 판매점

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