MAC97A6 반도체 회로 부품 판매점
(MAC97 Series) Sensitive Gate Triacs Silicon Bidirectional Thyristors
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 ON Semiconductor |
www.DataSheet4U.com
MAC97 Series
Preferred Device
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed for use in solid state relays, MPU interface, TTL logic and
any other light industrial or consumer application. Supplied in an
inexpensive TO−92 package which is readily adaptable for use in
automatic insertion equipment.
Features
• One−Piece, Injection−Molded Package
• Blocking Voltage to 600 Volts
• Sensitive Gate Triggering in Four Trigger Modes (Quadrants) for all
possible Combinations of Trigger Sources, and especially for Circuits
that Source Gate Drives
• All Diffused and Glassivated Junctions for Maximum Uniformity of
Parameters and Reliability
• Pb−Free Packages are Available*
http://onsemi.com
TRIACS
0.8 AMPERE RMS
200 thru 600 VOLTS
MT2
MT1
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off-State Voltage
(TJ = −40 to +110°C) (Note 1)
Sine Wave 50 to 60 Hz, Gate Open
MAC97A4
MAC97A6
MAC97A8
VDRM,
VRRM
200
400
600
V
On-State RMS Current
Full Cycle Sine Wave 50 to 60 Hz
(TC = +50°C)
Peak Non−Repetitive Surge Current
One Full Cycle, Sine Wave 60 Hz
(TC = 110°C)
Circuit Fusing Considerations (t = 8.3 ms)
IT(RMS)
ITSM
I2t
0.6
8.0
0.26
A
A
A2s
Peak Gate Voltage
(t v 2.0 ms, TC = +80°C)
VGM 5.0 V
Peak Gate Power
(t v 2.0 ms, TC = +80°C)
PGM 5.0 W
Average Gate Power
(TC = 80°C, t v 8.3 ms)
PG(AV)
0.1
W
Peak Gate Current
(t v 2.0 ms, TC = +80°C)
IGM 1.0 A
Operating Junction Temperature Range
TJ −40 to +110 °C
Storage Temperature Range
Tstg −40 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
MARKING
DIAGRAMS
1
23
TO−92 (TO−226AA)
CASE 029
STYLE 12
MAC
97Ax
AYWWG
G
MAC97Ax
A
Y
WW
G
= Device Code
x = 4, 6, or 8
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
1 Main Terminal 1
2 Gate
3 Main Terminal 2
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2005
September, 2005 − Rev. 9
1
Publication Order Number:
MAC97/D
MAC97 Series
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes for 10 Seconds
Symbol
RqJC
RqJA
TL
Max Unit
75 °C/W
200 °C/W
260 °C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min Typ
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25°C
TJ = +110°C
IDRM, IRRM
−
−
−
−
ON CHARACTERISTICS
Peak On−State Voltage
(ITM = ".85 A Peak; Pulse Width v 2.0 ms, Duty Cycle v 2.0%)
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 100 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
VTM
−−
IGT
−−
−−
−−
−−
Gate Trigger Voltage (Continuous dc)
(VD = 12 Vdc, RL = 100 W)
MT2(+), G(+) All Types
MT2(+), G(−) All Types
MT2(−), G(−) All Types
MT2(−), G(+) All Types
VGT
− .66
− .77
− .84
− .88
Gate Non−Trigger Voltage
(VD = 12 V, RL = 100 W, TJ = 110°C)
All Four Quadrants
VGD
0.1 −
Holding Current
(VD = 12 Vdc, Initiating Current = 200 mA, Gate Open)
Turn-On Time
(VD = Rated VDRM, ITM = 1.0 A pk, IG = 25 mA)
DYNAMIC CHARACTERISTICS
IH − 1.5
tgt − 2.0
Critical Rate−of−Rise of Commutation Voltage
(VD = Rated VDRM, ITM = .84 A,
Commutating di/dt = .3 A/ms, Gate Unenergized, TC = 50°C)
Critical Rate of Rise of Off−State Voltage
(VD = Rated VDRM, TC = 110°C, Gate Open, Exponential Waveform
dV/dt(c)
− 5.0
dv/dt
− 25
Max
10
100
1.9
5.0
5.0
5.0
7.0
2.0
2.0
2.0
2.5
−
10
−
−
−
Unit
mA
mA
V
mA
V
V
mA
ms
V/ms
V/ms
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