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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
BT138 series
Triacs
Product specification
June 2001
NXP Semiconductors
Triacs
Product specification
BT138 series
GENERAL DESCRIPTION
Passivated triacs in a plastic envelope,
intended for use in applications requiring
high bidirectional transient and blocking
voltage capability and high thermal
cycling
performance.
Typical
applications include motor control,
industrial and domestic lighting, heating
and static switching.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. MAX. UNIT
VDRM
IT(RMS)
ITSM
BT138-
BT138-
BT138-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
600
600F
600G
600
800
800F
800G
800
12 12
95 95
V
A
A
PINNING - TO220AB
PIN DESCRIPTION
1 main terminal 1
2 main terminal 2
3 gate
tab main terminal 2
PIN CONFIGURATION
tab
1 23
SYMBOL
T2
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VDRM
IT(RMS)
ITSM
I2t
dIT/dt
IGM
VGM
PGM
PG(AV)
Tstg
Tj
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
full sine wave; Tmb ≤ 99 ˚C
full sine wave; Tj = 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
ITM = 20 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
T2+ G+
T2+ G-
T2- G-
T2- G+
over any 20 ms period
-
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
MAX.
-600
6001
-800
800
12
95
105
45
50
50
50
10
2
5
5
0.5
150
125
UNIT
V
A
A
A
A2s
A/µs
A/µs
A/µs
A/µs
A
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
June 2001
1
Rev 1.400
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