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PDF LMBT6517LT1G Data sheet ( Hoja de datos )
| Número de pieza | LMBT6517LT1G | |
| Descripción | High Voltage Transistor | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
High Voltage Transistors
NPN Silicon
We declare that the material of product
compliance with RoHS requirements.
Ordering Information
Device
LMBT6 517LT1G
S-LMBT6 517LT1G
LMBT6517LT3G
S-LMBT6517LT3G
Marking
1Z
1Z
Shipping
3000/Tape&Reel
10000/Tape&Reel
LMBT6517LT1G
S-LMBT6517LT1G
1
2
3
MAXIMUM RATINGS
SOT–23
Rating
Symbol
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Base Current
IB
Collector Current — Continuous I C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
(S-)LMBT6517LT1 G= 1Z
Value
350
350
5.0
250
500
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
1
BASE
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max Unit
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4
417
–55 to +150
mW/°C
°C/W
°C
3
COLLECTOR
2
EMITTER
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = 1.0 mAdc )
Collector–Base Breakdown Voltage
(I C = 100 µAdc )
Emitter–Base Breakdown Voltage
(I E = 10 µAdc )
Collector Cutoff Current
( V CB = 250Vdc )
Emitter Cutoff Current
( V EB = 5.0Vdc )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V (BR)CEO
V (BR)CBO
V (BR)EBO
I CBO
I EBO
350
350
6.0
—
—
Max Unit
— Vdc
— Vdc
— Vdc
50 nAdc
50 nAdc
Rev.O 1/6
1 page  
FIGURE A
tP
PP
LESHAN RADIO COMPANY, LTD.
LMBT6517LT1G , S-LMBT6517LT1G
PP
t1
1/f
t1
DUTY CYCLE =t 1 f = t P
PEAK PULSE POWER = P P
Design Note: Use of Transient Thermal Resistance Data
Rev.O 5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet LMBT6517LT1G.PDF ] | |
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