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PDF MMZ25332BT1 Data sheet ( Hoja de datos )
| Número de pieza | MMZ25332BT1 | |
| Descripción | Heterojunction Bipolar Transistor | |
| Fabricantes | Freescale Semiconductor | |
| Logotipo |  |
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Freescale Semiconductor
Technical Data
Document Number: MMZ25332B
Rev. 0, 5/2012
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
High Efficiency/Linearity Amplifier
MMZ25332BT1
The MMZ25332B is a 2--stage, high linearity InGaP HBT broadband amplifier
designed for femtocell, picocell, WLAN (802.11g/n), W--CDMA, TD--SCDMA
and LTE wireless broadband applications. It provides exceptional linearity for
LTE and W--CDMA air interfaces with an ACPR of --50 dBc at an output power
of up to 22 dBm, covering frequencies from 1800–2800 MHz. It operates from a
supply voltage of 3 to 5 volts. The amplifier is fully input matched, requires
minimal external matching on the output and is housed in a cost--effective,
surface mount QFN 3×3 package. The device offers state--of--the--art reliability,
ruggedness, temperature stability and ESD performance.
• Typical Performance: VCC1 = VCC2 = VBIAS = 5 Volts, ICQ = 400 mA
Frequency
Pout
(dBm)
Gps
(dB)
ACPR
(dBc)
PAE
(%) Test Signal
2140 MHz 22 27.0 --50.0 7.0 W--CDMA
2620 MHz
21
26.0 --50.0
5.0
LTE
20 MHz
Features
• Frequency: 1800--2800 MHz
• P1dB: 33 dBm @ 2500 MHz
• Power Gain: 26.5 dB @ 2500 MHz
• OIP3: 48 dBm @ 2500 MHz
• EVM < 3% @ 26.5 dBm Pout, WiMAX (802.16e)
• Active Bias Control (adjustable externally)
• Single 3 to 5 Volt Supply
• Single--ended Power Detector
• Cost--effective QFN Surface Mount Package
• In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel.
1800--2800 MHz, 26.5 dB
33 dBm
InGaP HBT
QFN 3×3
PLASTIC
Table 1. Typical CW Performance (1)
Characteristic
1800 2500 2800
Symbol MHz MHz MHz Unit
Small--Signal Gain
(S21)
Gp 27.6 26.5 25.0 dB
Input Return Loss
(S11)
IRL --26 --17 --16 dB
Output Return Loss
(S22)
ORL
--9 --17 --16 dB
Power Output @
P1dB 32 33 32 dBm
1dB Compression
1. VCC1 = VCC2 = VBIAS = 5 Vdc, TA = 25°C, 50 ohm system,
CW Application Circuit
Table 2. Maximum Ratings
Rating
Symbol
Value
Unit
Supply Voltage
VCC 6 V
Supply Current
ICC
1200
mA
RF Input Power
Pin 30 dBm
Storage Temperature Range
Tstg --65 to +150 °C
Junction Temperature (2)
TJ 150 °C
2. For reliable operation, the junction temperature should not
exceed 150°C.
Table 3. Thermal Characteristics
Characteristic
Symbol
Value (3)
Thermal Resistance, Junction to Case
Case Temperature 92°C, VCC1 = VCC2 = VBIAS = 5 Vdc
RθJC
16
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Unit
°C/W
© Freescale Semiconductor, Inc., 2012. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MMZ25332BT1
1
1 page  
3.00
1.6 x 1.6 Solder Pad
with Thermal Via
Structure
0.70
0.30
2.00 3.40
0.50
Figure 5. PCB Pad Layout for QFN 3x3
MA05
YWZ
Figure 6. Product Marking
RF Device Data
Freescale Semiconductor, Inc.
MMZ25332BT1
5
5 Page | ||
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| PDF Descargar | [ Datasheet MMZ25332BT1.PDF ] | |
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