PDF MMG3014NT1 Data sheet ( Hoja de datos )

Número de pieza	MMG3014NT1
Descripción	Heterojunction Bipolar Transistor
Fabricantes	Freescale Semiconductor
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No Preview Available ! Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3014NT1 is a general purpose amplifier that is internally input matched and internally output prematched. It is designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 40 to 4000 MHz such as cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small--signal RF. Features  Frequency: 40--4000 MHz  P1dB: 25 dBm @ 900 MHz  Small--Signal Gain: 19.5 dB @ 900 MHz  Third Order Output Intercept Point: 40.5 dBm @ 900 MHz  Single 5 V Supply  Active Bias  Cost--effective SOT--89 Surface Mount Plastic Package  In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. Document Number: MMG3014NT1 Rev. 4, 8/2014 MMG3014NT1 40--4000 MHz, 19.5 dB 25 dBm InGaP HBT GPA SOT--89 Table 1. Typical Performance (1) Characteristic 900 2140 3500 Symbol MHz MHz MHz Unit Small--Signal Gain (S21) Gp 19.5 15 10 dB Input Return Loss (S11) Output Return Loss (S22) IRL ORL --25 --12 --8 dB --11 --13 --19 dB Power Output @1dB P1dB Compression 25 25.8 25 dBm Third Order Output Intercept Point OIP3 40.5 40.5 40 dBm 1. VCC = 5 Vdc, TA = 25C, 50 ohm system, application circuit tuned for specified frequency. Table 2. Maximum Ratings Rating Supply Voltage Supply Current RF Input Power Storage Temperature Range Junction Temperature Symbol Value VCC ICC Pin Tstg TJ 6 300 25 --65 to +150 175 Unit V mA dBm C C Table 3. Thermal Characteristics Characteristic Symbol Value (2) Thermal Resistance, Junction to Case Case Temperature 81C, 5 Vdc, 135 mA, no RF applied RJC 27.4 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. Unit C/W  Freescale Semiconductor, Inc., 2008, 2011, 2014. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MMG3014NT1 1 1 page 50 OHM APPLICATION CIRCUIT: 800--1000 MHz VSUPPLY R1 RF INPUT Z1 Z2 Z3 C1 C5 Z4 C6 L1 DUT VCC Z5 C3 C4 Z6 Z7 C2 RF Z8 OUTPUT C7 Z1, Z8 Z2, Z7 Z3 Z4 0.274 x 0.058 Microstrip 0.073 x 0.058 Microstrip 0.066 x 0.058 Microstrip 0.509 x 0.058 Microstrip Z5 Z6 PCB 0.172 x 0.058 Microstrip 0.403 x 0.058 Microstrip Getek Grade ML200C, 0.031, r = 4.1 Figure 14. 50 Ohm Test Circuit Schematic 30 20 S21 10 0 --10 S22 --20 --30 --40 700 S11 800 900 f, FREQUENCY (MHz) VCC = 5 Vdc 1000 1100 Figure 15. S21, S11 and S22 versus Frequency C1 C6 C5 R1 C4 C3 L1 C2 C7 MMG30XX Rev 2 Figure 16. 50 Ohm Test Circuit Component Layout Table 8. 50 Ohm Test Circuit Component Designations and Values Part Description C1, C2 220 pF Chip Capacitors C3 0.1 F Chip Capacitor C4 2.2 F Chip Capacitor C5 0.2 pF Chip Capacitor C6 4.7 pF Chip Capacitor C7 1.8 pF Chip Capacitor L1 10 nH Chip Inductor R1 0  Chip Resistor Part Number C0805C221J5GAC C0603C104J5RAC C0805C225J4RAC 12065J0R2BS C0603C479J5GAC C1206C189D5GAC HK160810NJ--T ERJ3GEY0R00V Manufacturer Kemet Kemet Kemet AVX Kemet Kemet Taiyo Yuden Panasonic RF Device Data Freescale Semiconductor, Inc. MMG3014NT1 5 5 Page 1.90 3.00 2X 4.35 45 2X 1.25 3X 0.85 0.70 2X 1.50 Figure 26. PCB Pad Layout for SOT--89A M3014N YYWW Figure 27. Product Marking RF Device Data Freescale Semiconductor, Inc. MMG3014NT1 11 11 Page

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