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PDF TTC012 Data sheet ( Hoja de datos )

Número de pieza TTC012
Descripción Bipolar Transistors
Fabricantes Toshiba 
Logotipo Toshiba Logotipo



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No Preview Available ! TTC012 Hoja de datos, Descripción, Manual

Bipolar Transistors Silicon NPN Triple-Diffused Type
TTC012
1. Applications
• High-Speed High-Voltage Switching
• Switching Voltage Regulators
• High-Speed DC-DC Converters
2. Features
(1) High speed switching : tf = 0.15 µs (typ.) (IC = 0.5 A)
(2) High collector breakdown voltage: VCES = 800 V , VCEO = 375 V
3. Packaging and Internal Circuit
TTC012
1. Base
2. Collector
3. Emitter
New PW-Mold2
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
VCBO 800 V
VCES
800
VCEO
375
Emitter-base voltage
Collector current (DC)
Collector current (pulsed)
Base current
Collector power dissipation
(Ta = 25)
(Note 1)
(Note 1)
VEBO
IC
ICP
IB
PC
8
2.0 A
3.0
1.0
1.1 W
Junction temperature
Storage temperature
Tj 150
Tstg -55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ensure that the junction temperature does not exceed 150.
1 2012-08-27
Rev.1.0
Free Datasheet http://www.datasheet4u.com/

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TTC012 pdf
Package Dimensions
TTC012
Unit: mm
Weight: 0.36 g (typ.)
Package Name(s)
TOSHIBA: 2-7J2S
Nickname: New PW-Mold2
5 2012-08-27
Rev.1.0
Free Datasheet http://www.datasheet4u.com/

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