2N3906 반도체 회로 부품 판매점
Si-Epitaxial PlanarTransistors
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 Diotec Semiconductor |
2N3905, 2N3906
PNP
Version 2004-01-20
Standard Pinning
1=C 2=B 3=E
Si-Epitaxial PlanarTransistors
Switching Transistors
PNP
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
625 mW
TO-92
(10D3)
0.18 g
Maximum ratings (TA = 25/C)
Collector-Emitter-voltage
B open
Collector-Base-voltage
E open
Emitter-Base-voltage
C open
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak collector current – Kollektorspitzenstrom
Junction temp. – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
- VCE0
- VCE0
- VEB0
Ptot
- IC
- ICM
Tj
TS
Grenzwerte (TA = 25/C)
2N3905, 2N3906
40 V
40 V
5V
625 mW 1)
100 mA
200 mA
150/C
- 55…+ 150/C
Characteristics (Tj = 25/C)
Collector saturation volt. – Kollektor-Sättigungsspannung
- IC = 10 mA, - IB = 1 mA
- IC = 50 mA, - IB = 5 mA
- VCEsat
- VCEsat
Base saturation voltage – Basis-Sättigungsspannung
- IC = 10 mA, - IB = 1 mA
- IC = 50 mA, - IB = 5 mA
- VBEsat
- VBEsat
Collector cutoff current – Kollektorreststrom
- VCE = 30 V, - VEB = 3 V
- ICEV
Emitter cutoff current – Emitterreststrom
- VCE = 30 V, - VEB = 3 V
- IEBV
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
– – 250 mV
– – 400 mV
– – 850 mV
– – 950 mV
– – 50 nA
– – 50 nA
1) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
32
General Purpose Transistors
2N3905, 2N3906
Characteristics (Tj = 25/C)
DC current gain – Kollektor-Basis-Stromverhältnis
- VCE = 1 V, - IC = 0.1 mA
- VCE = 1 V, - IC = 1 mA
- VCE = 1 V, - IC = 10 mA
- VCE = 1 V, - IC = 50 mA
- VCE = 1 V, - IC = 100 mA
2N3905
2N3906
2N3905
2N3906
2N3905
2N3906
2N3905
2N3906
2N3905
2N3906
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
Gain-Bandwidth Product – Transitfrequenz
- VCE = 20 V, - IC = 10 mA,
f = 100 MHz
2N3905
2N3906
fT
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 5 V, IE = ie = 0, f = 100 kHz
CCB0
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- VEB = 0.5 V, IC = ic = 0, f = 100 kHz
CEB0
Noise figure – Rauschzahl
- VCE
RG =
= 5 V,
1 kS f
- IC = 100 :A
= 10 Hz ...15.7
kHz
2N3905
2N3906
F
F
Switching times – Schaltzeiten
turn-on time
turn-off time
ICon = 10 mA,
IBon = - IBoff = 1 mA
ton
toff
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
30 –
60 –
–
–
40 –
80 –
–
–
50 – 150
100 – 300
30 –
60 –
–
–
15 –
30 –
–
–
200 MHz
250 MHz
–
–
–
–
– – 4.5 pF
– – 10 pF
– – 5 dB
– – 4 dB
– – 70
– – 300
RthA 200 K/W 1)
2N3903, 2N3904
1) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
33
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제조업체: Diotec Semiconductor
( diotec )
2N3906 transistor
데이터시트 다운로드 :
[ 2N3906.PDF ]
[ 2N3906 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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