2N3904 반도체 회로 부품 판매점
0.2A, 40V, NPN General Purpose Transistor
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 ROHM Semiconductor |
Transistors
UMT3904 / SST3904 / MMST3904 / 2N3904
NPN General Purpose Transistor
UMT3904 / SST3904 / MMST3904 / 2N3904
!Features
1) BVCEO > 40V (IC = 1mA)
2) Complements the UMT3906 / SST3906 / MMST3906
/ 2N3906.
!Package, marking and packaging specifications
Part No.
Packaging type
Marking
Code
Basic ordering unit
(pieces)
UMT3904
UMT3
R1A
T106
SST3904
SST3
R1A
T116
MMST3904
SMT3
R1A
T146
2N3904
TO-92
-
T93
3000
3000
3000
3000
!Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
VCBO
VCEO
VEBO
IC
UMT3904,
Collector SST3904,
power
MMST3904
dissipation SST3904, MMST3904
PC
2N3904
Junction temperature
Tj
Storage temperature
Tstg
* When mounted on a 7 x 5 x 0.6 mm ceramic board.
Limits
60
40
6
0.2
0.2
0.35
0.625
150
−55~+150
Unit
V
V
V
A
W
W*
W
°C
°C
!External dimensions (Units : mm)
UMT3904
ROHM : UMT3
EIAJ : SC-70
2.0±0.2
1.3±0.1
0.65 0.65
(1) (2)
0.9±0.1
0.2 0.7±0.1
0~0.1
(3)
0.3
+0.1
−0
0.15±0.05
All terminals have same dimensions
SST3904
ROHM : SST3
MMST3904
ROHM : SMT3
EIAJ : SC-59
2N3904
2.9±0.2
1.9±0.2
0.95 0.95
0.95
+0.2
−0.1
0.45±0.1
(1) (2)
(3)
0~0.1
0.2Min.
0.4
+0.1
−0.05
0.15
+0.1
−0.06
All terminals have same dimensions
2.9±0.2
1.9±0.2
0.95 0.95
(1) (2)
1.1
+0.2
−0.1
0.8±0.1
0~0.1
(3)
0.4
+0.1
−0.05
0.15
+0.1
−0.06
All terminals have same dimensions
4.8±0.2
3.7±0.2
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
ROHM : TO-92
EIAJ : SC-43
0.5
+0.15
−0.05
(1)
(2)
(3)
2.5
+0.3
−0.1
5
0.45±0.1
2.3
(1) Emitter
(2) Base
(3) Collector
!Electrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Symbol
BVCBO
BVCEO
BVEBO
ICES
IEBO
VCE(sat)
Base-emitter saturation voltage
VBE(sat)
DC current transfer ratio
Transition frequency
Collector output capacitance
Emitter input capacitance
Delay time
Rise time
Storage time
Fall time
hFE
fT
Cob
Cib
td
tr
tstg
tf
Min.
60
40
6
-
-
-
-
0.65
-
40
70
100
60
30
300
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
~
-
-
-
-
-
-
-
-
-
Max.
-
-
-
50
50
0.2
0.3
0.85
0.95
-
-
300
-
-
-
4
8
35
35
200
50
Unit
V
V
V
nA
nA
V
V
-
MHz
pF
pF
ns
ns
ns
ns
Conditions
IC = 10µA
IC = 1mA
IE = 10µA
VCB = 30V
VEB = 3V
IC/IB = 10mA/1mA
IC/IB = 50mA/5mA
IC/IB = 10mA/1mA
IC/IB = 50mA/5mA
VCE = 1V , IC = 0.1mA
VCE = 1V , IC = 1mA
VCE = 1V , IC = 10mA
VCE = 1V , IC = 50mA
VCE = 1V , IC = 100mA
VCE = 20V , IE = −10mA, f = 100MHz
VCB = 10V , f = 100kHz
VEB = 0.5V , f = 100kHz
VCC = 3V , VBE(OFF) = 0.5V , IC = 10mA , IB1 = 1mA
VCC = 3V , VBE(OFF) = 0.5V , IC = 10mA , IB1 = 1mA
VCC = 3V , IC = 10mA , IB1 = −IB2 = 1mA
VCC = 3V , IC = 10mA , IB1 = −IB2 = 1mA
Transistors
!Electrical characteristic curves
10
40
Ta=25°C
35
8
30
6 25
20
4 15
10
2
5.0
IB=0µA
0
0 10 20
COLLECTOR-EMITTER VOLTAGE : VCE (V)
Fig.1 Grounded emitter output
characteristics
UMT3904 / SST3904 / MMST3904 / 2N3904
Ta=25°C
IC / IB=10
0.3
0.2
0.1
0
0.1 1.0 10 100
COLLECTOR CURRENT : IC (mA)
Fig.2 Collector-emitter saturation
voltage vs. collector current
500
Ta=25°C
VCE=1V 3V 5V 10V
100
10
5
0.1 1.0 10 100 1000
COLLECTOR CURRENT : IC (mA)
Fig.3 DC current gain vs. collector current ( Ι )
500
Ta=125°C
Ta=25°C
100
Ta=−55°C
VCE=5V
10
5
0.1 1.0 10 100 1000
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs. collector current ( ΙΙ )
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제조업체: ROHM Semiconductor
( rohm )
2N3904 transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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