2N3811U 반도체 회로 부품 판매점
PNP SILICON DUAL TRANSISTOR
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 Microsemi Corporation |
PNP SILICON DUAL TRANSISTOR
Qualified per MIL-PRF-19500/336
Devices
2N3810
2N3810L
2N3810U
2N3811
2N3811L
2N3811U
TECHNICAL DATA
Qualified
Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = +250C
Operating & Storage Junction Temperature Range
1) Derate linearly 2.86 mW/0C for TA > +250C
2) Derate linearly 3.43 mW/0C for TA > +250C
Symbol
VCEO
VCBO
VEBO
IC
PT
TJ, Tstg
Value
60
60
5.0
50
One Both
Section 1 Sections2
0.5 0.6
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
W
0C
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
IC = 10 µAdc
V(BR)CBO
Collector-Emitter Breakdown Current
IC = 10 mAdc
V(BR)CEO
Emitter-Base Breakdown Voltage
IE = 10 µAdc
V(BR)EBO
Collector-Base Cutoff Current
VCB = 50 Vdc
ICBO
Emitter-Base Cutoff Current
VEB = 4.0 Vdc
IEBO
Min.
60
60
5.0
TO-78*
*See appendix A
for package outline
Max.
Unit
Vdc
Vdc
Vdc
10 ηAdc
10 ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N3810, 2N3810L, 2N3811, 2N3811L JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 10 µAdc, VCE = 5.0 Vdc
IC = 100 µAdc, VCE = 5.0 Vdc
IC = 500 µAdc, VCE = 5.0 Vdc
2N3810, 2N3810L
IC = 1.0 mAdc, VCE = 5.0 Vdc
IC = 10 mAdc, VCE = 5.0 Vdc
IC = 1.0 µAdc, VCE = 5.0Vdc
IC = 10 µAdc, VCE = 5.0 Vdc
IC = 100 µAdc, VCE = 5.0 Vdc
IC = 500 µAdc, VCE = 5.0 Vdc
2N3811, 2N3811L
IC = 1.0 mAdc, VCE = 5.0 Vdc
IC = 10 mAdc, VCE = 5.0 Vdc
Collector-Emitter Saturation Voltage
IC = 100 µAdc, IB = 10 µAdc
IC = 1.0 mAdc, IB = 100 µAdc
Base-Emitter Saturation Voltage
IC = 100 µAdc, IB = 10 µAdc
IC = 1.0 mAdc, IB = 100 µAdc
Base-Emitter Non-Saturation Voltage
VCE = 5.0 Adc, IC = 100 µAdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio, Magnitude
IC = 500 µAdc, VCE = 5.0 Vdc, f = 30 MHz
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 100 MHz
Small-Signal Short Circuit Forward Current Transfer Ratio
IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz
2N3810, L
2N3811, L
Small-Signal Short Circuit Input Impedance
IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz
2N3810, L
2N3811, L
Small-Signal Short Circuit Output Admittance
IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz
Output Capacitance
VCB = 5.0 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Input Capacitance
VEB = 0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz
Noise Figure
2N3810, L
IC = 100 µAdc, VCE = 10 Vdc, f = 100 Hz, RG = 3.0 kΩ
IC = 100 µAdc, VCE = 10 Vdc, f = 1.0 kHz, RG = 3.0 kΩ
IC = 100 µAdc, VCE = 10 Vdc, f = 10 kHz, RG = 3.0 kΩ
IC = 100 µAdc, VCE = 10 Vdc, f = 10 Hz to 15.7 kHz, RG = 3.0 kΩ
Symbol
hFE
VCE(sat)
VBE(sat)
VBE
hfe
hfe
hje
hoe
Cobo
Cibo
F1
F2
F3
F4
Min.
100
150
150
150
125
75
225
300
300
300
250
1.0
1.0
150
300
3.0
3.0
5.0
2N3811, L
IC = 100 µAdc, VCE = 10 Vdc, f = 100 Hz, RG = 3.0 kΩ
IC = 100 µAdc, VCE = 10 Vdc, f = 1.0 kHz, RG = 3.0 kΩ
IC = 100 µAdc, VCE = 10 Vdc, f = 10 kHz, RG = 3.0 kΩ
IC = 100 µAdc, VCE = 10 Vdc, f = 10 Hz to 15.7 kHz, RG = 3.0 kΩ
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
F1
F2
F3
F4
Max.
450
450
450
900
900
900
0.2
0.25
0.7
0.8
0.7
5.0
600
900
30
40
60
5.0
8.0
7.0
3.0
2.5
3.5
4.0
1.5
2.0
2.5
Unit
Vdc
Vdc
Vdc
kΩ
µmhos
pF
pF
dB
dB
120101
Page 2 of 2
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제조업체: Microsemi Corporation
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2N3811U transistor
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