2N2904A 반도체 회로 부품 판매점
PNP SWITCHING SILICON TRANSISTOR
|
|
 Microsemi Corporation |
TECHNICAL DATA
PNP SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/290
Devices
2N2904
2N2904A
2N2904AL
2N2905
2N2905A
2N2905AL
Qualified Level
JAN
JANTX
JANTXV
JANS
MAXIMUM RATINGS
Ratings
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ TA = +250C (1)
@ TC = +250C (2)
VCEO
VCBO
VEBO
IC
PT
Operating & Storage Junction Temp. Range
THERMAL CHARACTERISTICS
TJ, Tstg
Characteristics
Symbol
Thermal Resistance, Junction-to-Case
1) Derate linearly 3.43 W/0C for TA > +250C
2) Derate linearly 17.2 W/0C for TC > +250C
RθJC
2N2904 2N2904A, L
2N2905 2N2905A, L
40 60
60
5.0
600
0.6
3.0
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
W
W
0C
Max.
0.29
Unit
0C/mW
ELECTRICAL CHARACTERISTICS (TA = +250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
2N2904, 2N2905
2N2904A, L, 2N2905A, L
V(BR)CEO
Collector-Emitter Cutoff Voltage
VCE = 40 Vdc
2N2904, 2N2905
ICES
VCE = 60 Vdc
2N2904A, L, 2N2905A, L
Collector-Base Cutoff Current
VCB = 50 Vdc
2N2904, 2N2905
2N2904A, L, 2N2905A, L
ICBO
VCB = 60 Vdc
All Types
Emitter-Base Cutoff Current
VEB = 3.5 Vdc
VEB = 5.0 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
IEBO
Min.
40
60
TO-39* (TO-205AD)
2N2904, 2N2904A
2N2905, 2N2905A
TO-5*
2N2904AL, 2N2905AL
*See appendix A for
package outline
Max.
Unit
Vdc
1.0 µAdc
1.0
20 ηAdc
10 µAdc
10
ηAdc
50 µAdc
10
120101
Page 1 of 2
2N2904, 2N2904A, 2N2904AL, 2N2905, 2N2905A, 2N2905AL JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 0.1 mAdc, VCE = 10 Vdc
2N2904
2N2905
2N2904A, 2N2904AL
2N2905A, 2N2905AL
IC = 1.0 mAdc, VCE = 10 Vdc
2N2904
2N2905
2N2904A, 2N2904AL
2N2905A, 2N2905AL
IC = 10 mAdc, VCE = 10 Vdc
2N2904
2N2905
2N2904A, 2N2904AL
2N2905A, 2N2905AL
IC = 150 mAdc, VCE = 10 Vdc
2N2904, 2N2904A, L
2N2905, 2N2905A, L
IC = 500 mAdc, VCE = 10 Vdc
2N2904
2N2905
2N2904A, 2N2904AL
2N2905A, 2N2905AL
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
Base-Emitter Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
DYNAMIC CHARACTERISTICS
Small-Signal Cutoff Frequency
IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz
2N2904
2N2905
2N2904A, 2N2905A
2N2904AL, 2N2905AL
Small-Signal Cutoff Frequency, Magnitude
IC = 50 mAdc, VCE = 20 Vdc, f = 100 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Input Capacitance
VEB = 2.0 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 30 Vdc; IC = 150 mAdc; IB1= 15 mAdc
Turn-Off Time
VCC = 30 Vdc; IC = 150 mAdc; IB1 = IB2 = 15 mAdc
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
Symbol
hFE
VCE(sat)
VBE(sat)
Min. Max.
20
35
40
75
25 175
50 450
40 175
100 450
35
75
40
100
40 120
100 300
20
30
40
50
0.4
1.6
1.3
2.6
hfe
hfe
Cobo
Cibo
ton
toff
25
50
40
100
2.0
8.0
30
45
300
Unit
Vdc
Vdc
pF
pF
ηs
ηs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
|
PDF 파일 내의 페이지 : 총 3 페이지
제조업체: Microsemi Corporation
( microsemi )
2N2904A transistor
데이터시트 다운로드 :
[ 2N2904A.PDF ]
[ 2N2904A 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
2N2904
GENERAL PURPOSE PNP TRANSISTOR - Seme LAB
2N2904
PNP SILICON PLANAR TRANSISTORS - Siemens Semiconductor Group
2N2904
PNP SWITCHING SILICON TRANSISTOR - Microsemi Corporation
2N2904
PNP SILICON TRANSISTORS - Central Semiconductor
2N2904
(2N2904A - 2N2907A) PNP Silicon Annular Hermetic Transistors - Motorola Semiconductors
2N2904
Silicon PNP Transistor - Semicoa Semiconductor
2N2904
Trans GP BJT PNP 40V 0.6A 3-Pin TO-39 - New Jersey Semiconductor
2N2904
PNP SILICON PLANAR SWITCHING TRANSISTORS - CDIL
2N2904
PNP Silicon Transistor - Texas