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Comset Semiconductors |
SEMICONDUCTORS
NPN TIP120-121-122
SILICON DARLINGTON POWER TRANSISTORS
NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220
enveloppe. They are intended for use in power linear and switching applications.
PNP complements are TIP125-126-127
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCBO
Collector-Base Voltage
VCEO
VEBO
Collector-Emitter Voltage
Emitter-Base Voltage
http://www.DataSheet4U.net/
IC Collector Current
ICM Collector Peak Current
IB Base Current
@ Tc < 25°
PT Power Dissipation
@ Ta < 25°
TJ Junction Temperature
Ts Storage Temperature range
Value
TIP120
TIP121
TIP122
TIP120
TIP121
TIP122
TIP120
TIP121
TIP122
TIP120
TIP121
TIP122
TIP120
TIP121
TIP122
TIP120
TIP121
TIP122
TIP120
TIP121
TIP122
TIP120
TIP121
TIP122
TIP120
TIP121
TIP122
TIP120
TIP121
TIP122
60
80
100
60
80
100
5
5
8
120
65
2
150
-65 to +150
Unit
V
V
V
A
A
mA
Watts
°C
05/10/2012
COMSET SEMICONDUCTORS
1|3
datasheet pdf - http://www.DataSheet4U.net/
SEMICONDUCTORS
NPN TIP120-121-122
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-case
RthJ-amb
From junction-case
From junction-ambient
Value
1.92
62.5
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
ICBO Collector Cutoff Current IE= 0,VCB = VCBOmax
ICEO
IEBO
VCEO
Collector Cutoff Current
IE= 0
VCE = 1/2 VCEOmax
http://www.DataSheet4U.net/
Emitter Cutoff Current VEB= 5 V, IC= 0
Collector-Emitter
Breakdown Voltage (*)
IC= 30 mA, IB= 0
VCE(SAT)
Collector-Emitter
saturation Voltage (*)
IC= 3 A, IB= 12 mA
IC= 5 A, IB= 20 mA
VBE(on)
Base-Emitter Voltage
(*)
IC= 3 A, VCE= 3 V
VCE= 3.0 V, IC= 0.5 A
hFE DC Current Gain (*)
VCE= 3.0 V, IC= 3 A
COB
Output Capacitance
IE= 0, VCB = 10 V,
ftest= 1MHz
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
TIP120
TIP121
TIP122
TIP120
TIP121
TIP122
TIP120
TIP121
TIP122
TIP120
TIP121
TIP122
TIP120
TIP121
TIP122
TIP120
TIP121
TIP122
TIP120
TIP121
TIP122
TIP120
TIP121
TIP122
TIP120
TIP121
TIP122
TIP120
TIP121
TIP122
-
-
-
60
80
100
-
-
-
1000
1000
-
-
-
-
-
-
-
-
-
-
-
-
-
0.2 mA
0.5 mA
2 mA
-
-V
-
2
V
4
2.5 V
-
-
-
200 pF
05/10/2012
COMSET SEMICONDUCTORS
2|3
datasheet pdf - http://www.DataSheet4U.net/
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