2SB772S 반도체 회로 부품 판매점
MEDIUM POWER LOW VOLTAGE TRANSISTOR
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 Unisonic Technologies |
UNISONIC TECHNOLOGIES CO., LTD
2SB772S
PNP SILICON TRANSISTOR
MEDIUM POWER LOW
VOLTAGE TRANSISTOR
DESCRIPTION
The UTC 2SB772S is a medium power low voltage transistor,
designed for audio power amplifier, DC-DC converter and voltage
regulator.
FEATURES
* High current output up to 3A
* Low saturation voltage
* Complement to 2SD882S
1
SOT-223
1
SOT-89
1
TO-92
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
- 2SB772SG-x-AA3-R
- 2SB772SG-x-AB3-R
2SB772SL-x-T92-B
2SB772SG-x-T92-B
2SB772SL-x-T92-K
2SB772SG-x-T92-K
Note: Pin Assignment: C: Collector B: Base
E: Emitter
Package
SOT-223
SOT-89
TO-92
TO-92
Pin Assignment
123
BCE
BCE
ECB
ECB
Packing
Tape Reel
Tape Reel
Tape Box
Bulk
MARKING
SOT-223
SOT-89
Rank
TO-92
UTC
B772S
1
L: Lead Free
G: Halogen Free
Data Code
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 3
QW-R208-002.H
2SB772S
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
Collector-Base Voltage
VCBO
-40
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
VEBO
-30
-5
Peak Collector Current
DC Collector Current
ICP -7
IC -3
Base Current
SOT-89
IB
-0.6
0.5
Power Dissipation
SOT-223
TO-92
PD
1
0.5
Junction Temperature
Storage Temperature
TJ
TSTG
+150
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
UNIT
V
V
V
A
A
A
W
W
W
°C
°C
ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
Collector-Base Breakdown Voltage
BVCBO
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
BVCEO
BVEBO
Collector Cut-Off Current
Collector Cut-Off Current
ICBO
ICEO
Emitter Cut-Off Current
DC Current Gain(Note 1)
Collector-Emitter Saturation Voltage
IEBO
hFE1
hFE2
VCE(SAT)
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
VBE(SAT)
fT
Output Capacitance
COB
Note 1: Pulse test: PW<300μs, Duty Cycle<2%
CLASSIFICATION OF hFE2
RANK
RANGE
Q
100 ~ 200
TEST CONDITIONS
IC=-100μA, IE=0
IC=-1mA, IB=0
IE=-100μA, IC=0
VCB=-30V, IE=0
VCE=-30V, IB=0
VEB=-3V, IC=0
VCE=-2V, IC=-20mA
VCE=-2V, IC=-1A
IC=-2A, IB=-0.2A
IC=-2A, IB=-0.2A
VCE=-5V, IC=-0.1A
VCB=-10V, IE=0, f=1MHz
P
160 ~ 320
MIN TYP MAX UNIT
-40 V
-30 V
-5 V
-1000 nA
-1000 nA
-1000 nA
30 200
100 150 400
-0.3 -0.5
V
-1.0 -2.0
V
80 MHz
45 pF
E
200 ~ 400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R208-002.H
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2SB772S transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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