2SB0938 반도체 회로 부품 판매점
Power Transistors
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 Panasonic Semiconductor |
Power Transistors
2SB0938 (2SB938), 2SB0938A (2SB938A)
wwwS.DaitlaiSchoeetn4U.PnetNP epitaxial planar type Darlington
For power amplification and switching
Complementary to 2SD1261, 2SD1261A
8.5±0.2
6.0±0.2
Unit: mm
3.4±0.3
1.0±0.1
■ Features
• High forward current transfer ratio hFE
• High-speed switching
• N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
0 to 0.4
0.8±0.1
2.54±0.3
1.4±0.1
5.08±0.5
R = 0.5
R = 0.5
1.0±0.1
0.4±0.1
123
(8.5)
(6.0)
1.3
Collector-base voltage
(Emitter open)
2SB0938
2SB0938A
Collector-emitter voltage 2SB0938
(Base open)
2SB0938A
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
−60
−80
−60
−80
−5
−4
−8
40
1.3
150
−55 to +150
■ Electrical Characteristics TC = 25°C ± 3°C
V
V
V
A
A
W
°C
°C
(6.5)
1: Base
2: Collector
3: Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
Internal Connection
C
B
E
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage
(Base open)
2SB0938 VCEO
2SB0938A
IC = −30 mA, IB = 0
−60
−80
V
Base-emitter voltage
Collector-base cutoff
current (Emitter open)
2SB0938
2SB0938A
VBE
ICBO
Collector-emitter cutoff
current (Base open)
2SB0938
2SB09378
ICEO
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
IEBO
hFE1
hFE2 *
VCE(sat)
Transition frequency
Turn-on time
Strage time
fT
ton
tstg
VCE = −3 V,IC = −3 A
VCB = −60 V,IE = 0
VCB = −80 V,IE = 0
VCE = −30 V,IB = 0
VCE = −40 V,IB = 0
VEB = −5 V,IC = 0
VCE = −3 V, IC = −0.5 A
VCE = −3 V, IC = −3 A
IC = −3 A, IB = −12 mA
IC = −5 A, IB = −20 mA
VCE = −10 V, IC = −0.5 A, f = 1 MHz
IC = −3 A,
IB1 = −12 mA, IB2 = 12 mA
1 000
2 000
−2.5 V
−200 µA
−200
−500 µA
−500
−2 mA
10 000
−2 V
−4
15 MHz
0.3 µs
2 µs
Fall time
tf VCC = −50 V
0.5 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
hFE1
QP
2 000 to 5 000 4 000 to 10 000 Note) The part number in the parenthesis shows conventional part number.
Publication date: March 2003
SJD00019BED
1
2SB0938, 2SB0938A
50
40
(1)
30
PC Ta
(1)TC=Ta
(2)With a 50×50×2mm
Al heat sink
(3)Without heat sink
(PC=1.3W)
20
10
(2)
(3)
0
0
40
80 120 160
Ambient temperature Ta (°C)
IC VCE
−6
TC=25˚C
−5 IB=–3.0mA
–2.5mA
–2.0mA
–1.5mA
−4 –1.0mA
–0.5mA
−3
–0.4mA
−2 –0.3mA
–0.2mA
−1
0
0 −1 −2 −3 −4 −5
Collector-emitter voltage VCE (V)
IC VBE
−10
VCE=–3V
−8
−6 25˚C
TC=100˚C
–25˚C
−4
−2
0
0 − 0.8 −1.6 −2.4 −3.2
Base-emitter voltage VBE (V)
−100
−10
−1
− 0.1
VCE(sat) IC
IC/IB=250
TC=100˚C
25˚C
–25˚C
hFE IC
106
VCE=–3V
105
TC=100˚C 25˚C
104
–25˚C
103
Cob VCB
104
IE=0
f=1MHz
TC=25˚C
103
102
10
− 0.01
− 0.01
− 0.1
−1
Collector current IC (A)
−10
102
− 0.01
− 0.1
−1
Collector current IC (A)
−10
1
− 0.1
−1
−10 −100
Collector-base voltage VCB (V)
Safe operation area
−100
Non repetitive pulse
TC=25˚C
−10 ICP
IC
−1
− 0.1
t=1ms
t=10ms
t=300ms
− 0.01
−1
−10
−100
−1 000
Collector-emitter voltage VCE (V)
Rth t
103
(1)Without heat sink
(2)With a 50×50×2mm Al heat sink
102 (1)
(2)
10
1
10−1
10−2
10−4
10−3
10−2
10−1
1
10 102 103 104
Time t (s)
2 SJD00019BED
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제조업체: Panasonic Semiconductor
( panasonic )
2SB0938 transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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