2SA1942 반도체 회로 부품 판매점
Power Transistor
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 Inchange Semiconductor |
Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1942
DESCRIPTION
With TO-3PL package
Complement to type 2SC5199
APPLICATIONS
Power amplifier applications
Recommended for 80W high fidelity audio
frequency amplifier output stage
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-3PL) and symbol
固电半导体Absolute maximum ratings(Ta=25 )
INCHANGE SEMICONDUCTORSYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-160
-160
-5
UNIT
V
V
V
IC Collector current
-12 A
IB Base current
-1.2 A
PC Collector power dissipation
TC=25
120 W
Tj Junction temperature
150
Tstg Storage temperature
-55~150
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1942
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0
-160
V
VCEsat Collector-emitter saturation voltage IC=-8A ;IB=-0.8A
-2.5 V
VBE Base-emitter voltage
IC=-6A ; VCE=-5V
-1.5 V
ICBO Collector cut-off current
VCB=-160V; IE=0
-5 A
IEBO Emitter cut-off current
VEB=-5V; IC=0
-5 A
hFE-1
DC current gain
IC=-1A ; VCE=-5V
55 160
hFE-2
DC current gain
固I电NC半H导A体NGE SEMICONDUCTORfT Transition frequency
COB Collector output capacitance
hFE-1 classifications
RO
IC=-6A ; VCE=-5V
IC=-1A ; VCE=-5V
IE=0; f=1MHz;VCB=-10V
35
30
320
MHz
pF
55-110
80-160
2
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2SA1942 transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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