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PDF BSC252N10NSFG Data sheet ( Hoja de datos )
| Número de pieza | BSC252N10NSFG | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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OptiMOS™2 Power-Transistor
Features
• Very low gate charge for high frequency applications
• Optimized for dc-dc conversion
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Low on-resistance R DS(on)
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
BSC252N10NSF G
Product Summary
V DS
R DS(on),max
ID
100 V
25.2 mΩ
40 A
PG-TDSON-8
Type
BSC252N10NSF G
Package
PG-TDSON-8
Marking
252N10NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
T A=25 °C,
R thJA=50 K/W2)
Pulsed drain current3)
Avalanche energy, single pulse
Gate source voltage
I D,pulse
E AS
V GS
T C=25 °C
I D=40 A, R GS=25 Ω
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
40
25
7.2
160
68
±20
78
-55 ... 150
55/150/56
Unit
A
mJ
V
W
°C
Rev. 2.08
page 1
2009-11-04
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
80
10 V
7V
60
40
6V
20
5.5 V
5V
4.5 V
0
0123
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
120
4
BSC252N10NSF G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
50
45 5 V
5.5 V
40
6V
35
30 7 V
25
10 V
20
15
10
5
0
5 0 20 40 60 80
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
60
80 40
40 20
0
0
Rev. 2.08
150 °C
25 °C
246
V GS [V]
0
80
page 5
20 40 60
I D [A]
80
2009-11-04
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet BSC252N10NSFG.PDF ] | |
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